STMicroelectronics - STGW60H65DRF

  1. Home
  2. STMicroelectronics - STGW60H65DRF
STGW60H65DRF by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGW60H65DRF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 120 A; Terminal Finish: Matte Tin (Sn); Maximum Gate-Emitter Voltage: 20 V;
Datasheet STGW60H65DRF Datasheet
In Stock1,436
NAME DESCRIPTION
Maximum Collector Current (IC): 120 A
Maximum Power Dissipation (Abs): 360 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,436 - -

Popular Products

Category Top Products

FGL60N100BNTD by Fairchild Semiconductor

FGL60N100BNTD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
FF600R12ME4AB11BPSA1 by Infineon Technologies

FF600R12ME4AB11BPSA1

Infineon Technologies

Insulated Gate Bipolar Transistors;
IHW15N120E1XKSA1 by Infineon Technologies

IHW15N120E1XKSA1

Infineon Technologies

IHW15N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Max Collector Current of 30A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 1450ns. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, making it suitable for various power control systems.
HGTD3N60C3S9A by Harris Semiconductor

HGTD3N60C3S9A

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Nominal Turn Off Time (toff): 325 ns; Case Connection: COLLECTOR;
APT35GT120JU2 by Microchip Technology

APT35GT120JU2

Microchip Technology

Microchip Technology's APT35GT120JU2 is an N-CHANNEL IGBT with 1200V VCEsat, 55A IC, and 260W power dissipation. Ideal for power control applications due to its fast turn-off time of 610ns and built-in diode configuration. Operates at up to 150°C temperature, making it suitable for high-power systems.
IXXX300N60C3 by Littelfuse

IXXX300N60C3

Littelfuse

IXXX300N60C3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 510A IC, and 2300W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 278ns and operates b/w -55 to 175 °C temperatures.
IXGH32N170A by Littelfuse

IXGH32N170A

Littelfuse

IXGH32N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 32A max collector current, and 370ns nominal turn-off time. Ideal for motor control applications due to its single configuration and flange mount package style.
IRG4BC30FDPBF by Infineon Technologies

IRG4BC30FDPBF

Infineon Technologies

IRG4BC30FDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 620ns and is designed for power control applications. With a max operating temperature of 150°C, it can handle up to 31A of collector current efficiently.
FS100R12KE3BOSA1 by Infineon Technologies

FS100R12KE3BOSA1

Infineon Technologies

FS100R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 140A, and turn off time of 610ns. Ideal for applications requiring high power switching like motor drives and renewable energy systems.
IRG4BC20WPBF by International Rectifier

IRG4BC20WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Transistor Application: MOTOR CONTROL;
HGTG11N120CND by Intersil

HGTG11N120CND

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Fall Time (tf): 400 ns;
SKM300GB12E4 by Semikron International

SKM300GB12E4

Semikron International

SKM300GB12E4 by Semikron is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.1V, IC of 422A, and toff of 637ns. Ideal for POWER CONTROL applications due to its high voltage rating (1200V) and fast switching times (ton: 264ns).
BSM150GB120DLC by Infineon Technologies

BSM150GB120DLC

Infineon Technologies

Infineon's BSM150GB120DLC is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, VCEsat of 2.6V, and IC of 300A. Ideal for high-power applications requiring fast switching with toff of 650ns and ton of 190ns. Suitable for use in power converters, motor drives, and renewable energy systems.
IRG4BC30W-SPBF by International Rectifier

IRG4BC30W-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;
STGP5H60DF by STMicroelectronics

STGP5H60DF

STMicroelectronics

STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.
FS150R12KT4PBPSA1 by Infineon Technologies

FS150R12KT4PBPSA1

Infineon Technologies

Infineon FS150R12KT4PBPSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn off time of 605ns. Ideal for applications requiring high power efficiency in industrial systems operating up to 150°C.
FGH40T120SMD by Onsemi

FGH40T120SMD

Onsemi

FGH40T120SMD by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 555W power dissipation. Ideal for high-power applications requiring efficient switching capabilities at temperatures up to 175°C.
SGS10N60RUFDTU by Fairchild Semiconductor

SGS10N60RUFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 284 ns;
APT150GN60JDQ4 by Advanced Power Technology

APT150GN60JDQ4

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 220 A; Package Body Material: PLASTIC/EPOXY; Case Connection: ISOLATED;
IRG4BC30FDPBF by International Rectifier

IRG4BC30FDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; JESD-609 Code: e3;