STMicroelectronics - STGWA80H65FB

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STGWA80H65FB by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGWA80H65FB
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Threshold Voltage: 7 V;
Datasheet STGWA80H65FB Datasheet
In Stock3,508
NAME DESCRIPTION
Maximum Collector Current (IC): 120 A
Maximum Power Dissipation (Abs): 469 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 7 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

Qty. Unit Price Ext. Price
3,508 $3.500 $12,278.000

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