125 A Insulated Gate Bipolar Transistors (IGBT) 19

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXBX50N360HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

660 W

125 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

1880 ns

3

IN-LINE

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247

889 ns

BSM75GD120DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

500 W

125 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

420 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

MG06100S-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

360 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

100 ns

UL RECOGNIZED

IXGK55N120A3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

125 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

1253 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

70 ns

FP75R17N3E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

125 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FP75R17N3E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

555 W

125 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL APPROVED

DDB6U134N16RR_B11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

400 W

125 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

510 ns

19

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL APPROVED

GA125TS120U

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

863 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

40

260

345 ns

UL APPROVED

SIGC158T170R3X1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

150 Cel

SILICON

1700 V

MATTE TIN

UPPER

S-XUUC-N

Not Qualified

e3

SIGC158T170R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.4 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSM75GD120DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

125 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

420 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

e3

110 ns

MWI75-12A8

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

500 W

125 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

700 ns

33

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X33

ISOLATED

Not Qualified

ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

150 ns

MUBW100-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

410 W

125 A

UNSPECIFIED

MOTOR CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

180 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

36 ns

VIE125-12S4

Littelfuse

N-CHANNEL

COMPLEX

NO

125 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

10

FLANGE MOUNT

830 W

150 Cel

SILICON

1200 V

UPPER

R-CUFM-X10

ISOLATED

Not Qualified

INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE

NOT SPECIFIED

NOT SPECIFIED

MKI100-12F8

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

125 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

395 ns

21

FLANGE MOUNT

125 Cel

SILICON

1200 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

LOW SATURATION VOLTAGE, FAST SWITCHING

NOT SPECIFIED

NOT SPECIFIED

190 ns

IXGK55N120A3D1

Littelfuse

N-CHANNEL

NO

460 W

125 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

TIN SILVER COPPER

e1

10

260

IXGX55N120A3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

125 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

1253 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

70 ns

IXGX55N120A3D1

Littelfuse

N-CHANNEL

NO

460 W

125 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

MG1775S-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1100 ns

7

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

450 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.