15 A Insulated Gate Bipolar Transistors (IGBT) 198

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MGP11N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

96 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

442 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-220AB

e0

68 ns

MGB15N43CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

21000 ns

2

SMALL OUTLINE

SILICON

460 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

5000 ns

MGB15N40CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

20500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

22 V

2.1 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

e0

30

235

6000 ns

STG15M65F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

2.2 V

NO LEAD

SQUARE

1

265 ns

2

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

S-XUUC-N2

34 ns

A1C15S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

142.8 W

15 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

199 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

134.5 ns

STGB8NC60K

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

DUAL

R-PDSO-G2

1

Not Qualified

e3

23 ns

STGD8NC60KTRL

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

DUAL

R-PDSO-G2

1

Not Qualified

e3

23 ns

STGD6NC60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

17.3 ns

STGD8NC60K

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

DUAL

R-PDSO-G2

1

Not Qualified

e3

23 ns

STGB8NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

23 ns

STGB8NC60KT4

STMicroelectronics

N-CHANNEL

YES

65 W

15 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

STGB8NC60KTRL

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

DUAL

R-PDSO-G2

Not Qualified

23 ns

STGD8NC60KT4

STMicroelectronics

N-CHANNEL

YES

62 W

15 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

MATTE TIN

1

e3

STGD8NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

106 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

16.5 ns

STGD7NB60S

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

SILICON

600 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

1160 ns

STGB8NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

106 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

16.5 ns

STGD8NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

23 ns

STGB6NC60HT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

e3

17.3 ns

STGD6NC60H-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

62.5 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

222 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.75 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

NOT SPECIFIED

NOT SPECIFIED

17.3 ns

STGB6NC60HD-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

222 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

17.3 ns

STGF7NB60SL

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

8100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

2.4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

1350 ns

STGP8NC60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

65 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

23 ns

STGP6NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

STGD6NC60HT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

17.3 ns

BUK856-450IX

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.8 V

THROUGH-HOLE

RECTANGULAR

1

8000 ns

5500 ns

3

FLANGE MOUNT

125 W

175 Cel

SILICON

12 V

8000 ns

4.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-220AB

BUK854-500IS

NXP Semiconductors

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3500 ns

3

FLANGE MOUNT

85 W

150 Cel

SILICON

500 V

30 V

4500 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

OM6526SAV

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

IRG8P08N120KD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

89 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

590 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

40 ns

IRG5K15FF06Z

Infineon Technologies

N-Channel

15 A

2.1 V

235 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

25000 ns

OM6526CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

85 W

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

6.5 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

OM6505SAT

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

IGC18T120T6LX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PM15CMA060

Infineon Technologies

22 W

15 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

OM6526SA

Infineon Technologies

N-CHANNEL

SINGLE

NO

85 W

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

6.5 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

OM6526SAT

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

OM6505SAV

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

OM6505SA

Infineon Technologies

N-CHANNEL

SINGLE

NO

72 W

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

IKD15N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

193 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

260

30 ns

IRG8B08N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

89 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

590 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

TO-220AB

40 ns

IRG5K15PM06Z

Infineon Technologies

N-Channel

15 A

2.1 V

60 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

25000 ns

IGC18T120T6L

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6505CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

72 W

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

1150 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

SIGC25T120CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

390 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

130 ns

SIGC14T60SNCX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

315 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

54 ns

SIGC20T120L

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

640 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

120 ns

SIGC25T120CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC08T60

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC08T60S

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

291 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

32 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.