15 A Insulated Gate Bipolar Transistors (IGBT) 198

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGD6NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

e3

17.3 ns

FP15R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

STGP6NC60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

222 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

17.3 ns

FB10R06KL4GB1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 W

15 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

7

260 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

e3

58 ns

A1C15S12M3

STMicroelectronics

N-CHANNEL

COMPLEX

NO

142.8 W

15 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

199 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

134.5 ns

IRG8P08N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

89 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

590 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

40 ns

FB10R06KL4G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 W

15 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

260 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

58 ns

FB10R06KL4GB1BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

260 ns

22

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X22

ISOLATED

58 ns

STGD7NB60ST4

STMicroelectronics

N-CHANNEL

SINGLE

YES

55 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

1160 ns

STGP8NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

65 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

23 ns

GT15Q301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

560 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

120 ns

IXYP10N65C3D1M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

128 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

44 ns

GT15J321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

340 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

170 ns

GT15Q101

Toshiba

N-CHANNEL

SINGLE

NO

150 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

1200 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

MG15J6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

500 ns

15

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-D15

ISOLATED

Not Qualified

400 ns

MG15N6ES42

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

15 A

6

SILICON

1000 V

Not Qualified

MP6750

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

55 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

6

350 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

55 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

HIGH SPEED

e0

STGB6NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

Not Qualified

e3

30

245

17.3 ns

NGD15N41ACLT4G

Onsemi

N-CHANNEL

YES

107 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

440 V

15 V

1.9 V

MATTE TIN

1

e3

30

260

NGB15N41CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

5700 ns

MGC15N43CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

UNSPECIFIED

1

21000 ns

UNCASED CHIP

175 Cel

SILICON

460 V

TIN LEAD

UPPER

X-XUUC-N

Not Qualified

e0

5000 ns

MGC15N35CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

15 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

UNSPECIFIED

1

19000 ns

UNCASED CHIP

175 Cel

SILICON

380 V

TIN LEAD

UPPER

X-XUUC-N

Not Qualified

VOLTAGE CLAMPING

e0

6000 ns

NGD18N40CLBT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

5200 ns

NGD15N41CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

5700 ns

MGC15N40CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

15 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

UNSPECIFIED

1

19000 ns

UNCASED CHIP

175 Cel

SILICON

440 V

TIN LEAD

UPPER

X-XUUC-N

Not Qualified

VOLTAGE CLAMPING

e0

6000 ns

MGB15N35CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

20500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

380 V

22 V

2.1 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

e0

235

6000 ns

MGB15N38CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

350 V

2.1 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

Not Qualified

e0

NGD15N41CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

5700 ns

NGD18N40CLB

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

5200 ns

MGP15N43CLT4

Onsemi

N-CHANNEL

YES

136 W

15 A

Insulated Gate BIP Transistors

175 Cel

400 V

2.1 V

MGP15N35CLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

20500 ns

3

FLANGE MOUNT

SILICON

380 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

6000 ns

NGP15N41CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

THROUGH-HOLE

RECTANGULAR

1

15000 ns

15500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

235

5700 ns

MGB15N40CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

20500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

NOT SPECIFIED

NOT SPECIFIED

6000 ns

NGD15N41CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

5700 ns

MGP15N38CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

350 V

17 V

2.1 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL

TO-220AB

e0

NGD18N40ACLBT4G

Onsemi

N-CHANNEL

YES

115 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

430 V

18 V

2.1 V

MATTE TIN

1

e3

30

260

NGP15N41CLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

THROUGH-HOLE

RECTANGULAR

1

15000 ns

15500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

260

5700 ns

MGP11N60ED

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

96 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

442 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-220AB

e0

68 ns

NGD8201BNT4G

Onsemi

N-CHANNEL

YES

115 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

430 V

18 V

1.8 V

Matte Tin (Sn) - annealed

1

e3

30

260

MGP15N40CLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

6000 ns

THROUGH-HOLE

RECTANGULAR

1

20000 ns

20500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

22 V

2.1 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-220AB

e3

260

6000 ns

MGP15N40CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

20500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

22 V

2.1 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-220AB

e0

235

6000 ns

NGP15N41ACLG

Onsemi

N-CHANNEL

NO

107 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

440 V

15 V

1.9 V

NGB15N41CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

5700 ns

MGB15N35CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

20500 ns

2

SMALL OUTLINE

SILICON

380 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

NOT SPECIFIED

NOT SPECIFIED

6000 ns

MGP15N35CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

20500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

380 V

22 V

2.1 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-220AB

e0

235

6000 ns

MGP15N43CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

21000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

460 V

17 V

2.1 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

5000 ns

NGB15N41ACLT4G

Onsemi

N-CHANNEL

YES

107 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

440 V

15 V

1.9 V

MATTE TIN

e3

NGD18N40CLBT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

5200 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.