Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
70 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
300 ns |
500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
SOLDER LUG |
RECTANGULAR |
6 |
500 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-PUFM-D17 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
15 A |
6 |
SILICON |
1200 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
15 A |
6 |
SILICON |
1200 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
55 W |
15 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1000 ns |
7 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
15 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
NO |
80 W |
15 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
100 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
100 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
SOLDER LUG |
RECTANGULAR |
6 |
700 ns |
15 |
FLANGE MOUNT |
SILICON |
500 V |
UPPER |
R-PUFM-D15 |
ISOLATED |
Not Qualified |
HIGH SPEED |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
2 |
FLANGE MOUNT |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSFM-T2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220 |
e0 |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
3 |
FLANGE MOUNT |
SILICON |
500 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
35 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
35 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
||||||||||||||||||
Toshiba |
NO |
80 W |
15 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
370 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
220 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
NO |
15 A |
UNSPECIFIED |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
6 |
500 ns |
20 |
IN-LINE |
SILICON |
600 V |
DUAL |
R-XDIP-T20 |
ISOLATED |
Not Qualified |
HIGH SPEED |
150 ns |
|||||||||||||||||||||||||||||
Toshiba |
55 W |
15 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
55 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
900 V |
25 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH SPEED |
e0 |
300 ns |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
15 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
NO |
55 W |
15 A |
UNSPECIFIED |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
20 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
DUAL |
R-XDIP-T20 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
15 A |
2 |
SILICON |
1200 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
15 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
TIN LEAD |
DUAL |
R-PDFM-P17 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
150 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
80 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
3.5 V |
SOLDER LUG |
RECTANGULAR |
6 |
600 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
UPPER |
R-PUFM-D13 |
ISOLATED |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE |
NO |
15 A |
UNSPECIFIED |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
6 |
500 ns |
20 |
IN-LINE |
SILICON |
600 V |
DUAL |
R-XDIP-T20 |
ISOLATED |
Not Qualified |
HIGH SPEED |
150 ns |
|||||||||||||||||||||||||||||
Toshiba |
15 A |
2.1 V |
1 |
Insulated Gate BIP Transistors |
100 Cel |
600 V |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
15 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
7 |
600 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
TIN LEAD |
DUAL |
R-PDFM-P17 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
150 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
15 A |
6 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
800 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
400 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
SOLDER LUG |
RECTANGULAR |
1 |
600 ns |
3 |
FLANGE MOUNT |
SILICON |
500 V |
UPPER |
R-PUFM-D3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
220 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
25 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
180 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
2 |
FLANGE MOUNT |
SILICON |
1200 V |
SINGLE |
R-PSFM-T2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220 |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
720 ns |
3 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
TIN LEAD |
SINGLE |
R-PSSO-G3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
170 ns |
||||||||||||||||||||||||||
Toshiba |
NO |
55 W |
15 A |
UNSPECIFIED |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
20 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
DUAL |
R-XDIP-T20 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
NO |
150 W |
15 A |
600 ns |
500 ns |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
25 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
180 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
560 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
70 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
GULL WING |
RECTANGULAR |
1 |
350 ns |
500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
70 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
400 ns |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
2 W |
15 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
6000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
40 W |
150 Cel |
SILICON |
400 V |
25 V |
7 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e0 |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
250 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
7.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
200 ns |
|||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
.45 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
50 mA |
THROUGH-HOLE |
RECTANGULAR |
1 |
1000 ns |
3 |
FLANGE MOUNT |
Unijunction Transistors |
SILICON |
600 V |
TIN LEAD |
.47 |
SINGLE |
R-PSFM-T3 |
Not Qualified |
.62 |
4.5 kohm |
TO-220AB |
e0 |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
60 W |
15 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
300 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
300 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
63.4 W |
15 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
30 V |
6.5 V |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.