15 A Insulated Gate Bipolar Transistors (IGBT) 198

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

GT15J311(SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG15Q6ES42

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

4 V

SOLDER LUG

RECTANGULAR

6

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-PUFM-D17

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG15Q6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

15 A

6

SILICON

1200 V

Not Qualified

MG15Q6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

15 A

6

SILICON

1200 V

Not Qualified

MIG15J855E

Toshiba

55 W

15 A

2.8 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

MG15N2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

400 ns

MIG10Q806H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

15 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MG10Q6ES50A

Toshiba

NO

80 W

15 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-XUFM-X17

Not Qualified

GT15J101

Toshiba

N-CHANNEL

SINGLE

NO

100 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

100 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

MG15H6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

700 ns

15

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-D15

ISOLATED

Not Qualified

HIGH SPEED

400 ns

S5J14M

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T2

COLLECTOR

Not Qualified

HIGH SPEED

TO-220

e0

GT15H101

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

500 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT15J301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT15J102

Toshiba

N-CHANNEL

SINGLE

NO

35 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

35 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

e0

400 ns

MG10Q6ES51A

Toshiba

NO

80 W

15 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

UPPER

R-XUFM-X17

Not Qualified

GT15J331(2-10S2C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

370 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

e0

220 ns

MIG15J805H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

15 A

UNSPECIFIED

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

6

500 ns

20

IN-LINE

SILICON

600 V

DUAL

R-XDIP-T20

ISOLATED

Not Qualified

HIGH SPEED

150 ns

MIG15J805E

Toshiba

55 W

15 A

2.8 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

GT15M321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

e0

300 ns

MIG10Q906HA

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

15 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG15J855

Toshiba

NO

55 W

15 A

UNSPECIFIED

2.8 V

THROUGH-HOLE

RECTANGULAR

1

20

IN-LINE

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

DUAL

R-XDIP-T20

Not Qualified

MG15Q2YS9

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

15 A

2

SILICON

1200 V

Not Qualified

MIG10Q906H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

15 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG15Q901H

Toshiba

N-CHANNEL

COMPLEX

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MIG15Q804H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN LEAD

DUAL

R-PDFM-P17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

150 ns

MG15J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

80 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

SOLDER LUG

RECTANGULAR

6

600 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

UPPER

R-PUFM-D13

ISOLATED

Not Qualified

HIGH SPEED

e0

400 ns

MIG15J855H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE

NO

15 A

UNSPECIFIED

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

6

500 ns

20

IN-LINE

SILICON

600 V

DUAL

R-XDIP-T20

ISOLATED

Not Qualified

HIGH SPEED

150 ns

MIG15J503L

Toshiba

15 A

2.1 V

1

Insulated Gate BIP Transistors

100 Cel

600 V

MIG10Q806HA

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

15 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG15Q904H

Toshiba

N-CHANNEL

COMPLEX

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

7

600 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN LEAD

DUAL

R-PDFM-P17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

150 ns

MG15N6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

15 A

6

SILICON

1000 V

Not Qualified

GT15N101

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

800 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

400 ns

MG15H1BS1

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-D3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT15J331(2-10S1C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

IN-LINE

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

220 ns

GT15J341

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

180 ns

S5J17M

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T2

COLLECTOR

Not Qualified

HIGH SPEED

TO-220

GT15Q311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

720 ns

3

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN LEAD

SINGLE

R-PSSO-G3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

170 ns

MIG15J805

Toshiba

NO

55 W

15 A

UNSPECIFIED

2.8 V

THROUGH-HOLE

RECTANGULAR

1

20

IN-LINE

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

DUAL

R-XDIP-T20

Not Qualified

5961-01-536-6695

Toshiba

N-CHANNEL

NO

150 W

15 A

600 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

GT15J341,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

180 ns

GT15Q102

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

560 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

120 ns

GT15J103(SM)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

GULL WING

RECTANGULAR

1

350 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

70 W

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

400 ns

GT15G101

Toshiba

N-CHANNEL

SINGLE

NO

2 W

15 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

40 W

150 Cel

SILICON

400 V

25 V

7 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

MG15N1BS1

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

CT15SM-24

Renesas Electronics

N-CHANNEL

SINGLE

NO

250 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

200 ns

2SH12

Renesas Electronics

N-CHANNEL

SINGLE

NO

.45 W

15 A

PLASTIC/EPOXY

POWER CONTROL

50 mA

THROUGH-HOLE

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

Unijunction Transistors

SILICON

600 V

TIN LEAD

.47

SINGLE

R-PSFM-T3

Not Qualified

.62

4.5 kohm

TO-220AB

e0

GN6015A

Renesas Electronics

N-CHANNEL

SINGLE

NO

60 W

15 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

300 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

RJP1CV3DPH-E0#T2

Renesas Electronics

N-CHANNEL

NO

63.4 W

15 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

6.5 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.