200 A Insulated Gate Bipolar Transistors (IGBT) 158

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGK120N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	780 W	200 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	THROUGH-HOLE	RECTANGULAR	1		830 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	123 ns
MG12150W-XN2MM	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		200 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	6		610 ns	35	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X35	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	340 ns
MG12150S-BN2MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	2		610 ns	7	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X7	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	340 ns	UL RECOGNIZED
VIE200-12S4	Littelfuse	N-CHANNEL	COMPLEX	NO		200 A	CERAMIC, METAL-SEALED COFIRED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	2			10	FLANGE MOUNT	1100 W	150 Cel	SILICON	1200 V						UPPER	R-CUFM-X10	ISOLATED	Not Qualified	INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE			NOT SPECIFIED	NOT SPECIFIED
IXGX120N60B	Littelfuse	N-CHANNEL	SINGLE	NO	660 W	200 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	280 ns	360 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	640 ns	5.5 V		SINGLE	R-PSIP-T3	COLLECTOR							105 ns
IXGK120N60B	Littelfuse	N-CHANNEL	SINGLE	NO	660 W	200 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	280 ns	360 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	640 ns	5.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA				105 ns
IXGN120N60A3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	200 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	UNSPECIFIED	RECTANGULAR	1		830 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	NICKEL	UPPER	R-PUFM-X4	ISOLATED		LOW CONDUCTION LOSS					123 ns	UL RECOGNIZED
IXGX120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	200 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		420 ns	3	IN-LINE		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR		LOW CONDUCTION LOSS					124 ns
IXXN200N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	780 W	200 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	UNSPECIFIED	RECTANGULAR	1		395 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		6 V		UPPER	R-PUFM-X4	ISOLATED		LOW CONDUCTION LOSS					140 ns	UL RECOGNIZED
MG12150S-DEN2MM	Littelfuse	N-CHANNEL	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	2		610 ns	7	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X7	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	340 ns	UL RECOGNIZED
IXXK100N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	200 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA	e1	10	260	92 ns
IXGN120N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	595 W	200 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	UNSPECIFIED	RECTANGULAR	1		830 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	NICKEL	UPPER	R-PUFM-X4	ISOLATED		LOW CONDUCTION LOSS					123 ns	UL RECOGNIZED
IXXN200N60C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	780 W	200 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	1		240 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		6 V		UPPER	R-PUFM-X4	ISOLATED							143 ns	UL RECOGNIZED
IXGK120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	200 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		885 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	122 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.