200 A Insulated Gate Bipolar Transistors (IGBT) 158

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG200Q1JS9	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY				UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X7		Not Qualified	CHOPPER SWITCH
MG200Q1US11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			4	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X4		Not Qualified
MG200J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT				SILICON	600 V				UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG200Q2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG200J2YS2	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A							2								SILICON	600 V							Not Qualified
MG200J6ES60	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	200 A	UNSPECIFIED	MOTOR CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	6			17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X17	ISOLATED	Not Qualified
MG200Q1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	200 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-PUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG200N1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			200 A							1								SILICON	1000 V							Not Qualified
MG150Q2YS51	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1250 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					50 ns
MG200Q1JS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG200J2YS45	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V				UPPER	R-PUFM-X7		Not Qualified
GT10G131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	200 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2000 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V	6 V	1.2 V		DUAL	R-PDSO-G8		Not Qualified						3100 ns
MG200Q2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2000 W	200 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
MG200Q1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1400 W	200 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		4	FLANGE MOUNT	Insulated Gate BIP Transistors	1400 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG150Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1250 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	50 ns
MG200Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG200Q2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG200J2YS21	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A							2								SILICON	600 V							Not Qualified
MG200J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT			150 Cel	SILICON	600 V				UPPER	R-PUFM-X7	ISOLATED	Not Qualified						400 ns
MG200Q1ZS11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1400 W	200 A	UNSPECIFIED	MOTOR CONTROL	600 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1400 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG200Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1310 W	200 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified						100 ns
MG200J2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A							2								SILICON	600 V							Not Qualified
MG200H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		900 ns	7	FLANGE MOUNT				SILICON	500 V				UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					850 ns
MG200Q1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		4	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X4		Not Qualified	HIGH SPEED
MG200Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1400 W	200 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-PUFM-X7		Not Qualified
MBM200GR6	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	690 W	200 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	2		550 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY, LOW NOISE					300 ns
RJP65S06DWT-80#X0	Renesas Electronics	N-CHANNEL				200 A												Insulated Gate BIP Transistors		150 Cel		650 V	30 V	6.8 V									NOT SPECIFIED	NOT SPECIFIED
MBN200F12	Renesas Electronics					200 A				3 V			1					Insulated Gate BIP Transistors				1200 V	20 V
MBB200GS6A	Renesas Electronics	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			200 A		POWER CONTROL					6								SILICON	600 V						ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					350 ns
MBB200GS6AW	Renesas Electronics	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	6		600 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X19	ISOLATED	Not Qualified	HIGH SPEED, LOW NOISE					400 ns
RJP1CS06DWA-80#W0	Renesas Electronics	N-CHANNEL				200 A												Insulated Gate BIP Transistors		150 Cel		1250 V	30 V										NOT SPECIFIED	NOT SPECIFIED
MBM200A6	Renesas Electronics					200 A				3 V			1					Insulated Gate BIP Transistors				600 V	20 V
MBM200JS12AW	Renesas Electronics				1470 W	200 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V	20 V
MBM200GS6AW	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED, LOW NOISE					300 ns
MBM200JS12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A		POWER CONTROL					2								SILICON	1200 V						ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					350 ns
MBM200GS12AW	Renesas Electronics				1000 W	200 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V	20 V
MBM200BS6	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A		POWER CONTROL					2								SILICON	600 V						ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					400 ns
MBM200GR12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY, LOW NOISE					300 ns
MBM200JS12EW	Renesas Electronics				1470 W	200 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V	20 V
MBM200GS6A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A		POWER CONTROL					2								SILICON	600 V						ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					300 ns
RJP1CS06DWT-80#X0	Renesas Electronics	N-CHANNEL				200 A												Insulated Gate BIP Transistors		150 Cel		1250 V	30 V										NOT SPECIFIED	NOT SPECIFIED
MBM200GR12	Renesas Electronics			NO	1130 W	200 A	PLASTIC/EPOXY			2.8 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V	20 V			UPPER	R-PUFM-X7		Not Qualified
RJP65S06DWA-80#W0	Renesas Electronics	N-CHANNEL		YES		200 A											UNCASED CHIP	Insulated Gate BIP Transistors		150 Cel		650 V	30 V	6.8 V									NOT SPECIFIED	NOT SPECIFIED
CT40TMH-8	Renesas Electronics	N-CHANNEL	SINGLE	NO		200 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V	30 V	7 V		SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
MBM200GS12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A		POWER CONTROL					2								SILICON	1200 V						ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					350 ns
IXGR50N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	IN-LINE			150 Cel	SILICON	900 V			TIN SILVER COPPER	SINGLE	R-PSIP-T3	ISOLATED	Not Qualified		TO-247AD	e1	10	260
IXGQ200N60Y3	Littelfuse				800 W	200 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V	20 V
IXGQ200N100Y3	Littelfuse				800 W	200 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V	20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.