200 A Insulated Gate Bipolar Transistors (IGBT) 158

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

GA200SA60SP

Infineon Technologies

630 W

200 A

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

GA200SA60UP

Infineon Technologies

500 W

200 A

1.9 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

BSM200GA100D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

1000 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

IRG5K200HF12B

Infineon Technologies

N-Channel

200 A

2.6 V

1025 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

185000 ns

IRG5K200HF06B

Infineon Technologies

N-Channel

200 A

2.1 V

650 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

195000 ns

FS150R12KE3G

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 W

200 A

UNSPECIFIED

2.1 V

UNSPECIFIED

RECTANGULAR

6

810 ns

29

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

BSM200GAR120DN2C

Infineon Technologies

N-Channel

200 A

920 ns

SILICON

1200 V

20 V

380 ns

FS150R12KE3P

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

340 ns

FP200R12N3T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

454 ns

46

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X46

ISOLATED

UL RECOGNIZED

297 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

SIGC156T60NR2

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

286 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N

Not Qualified

206 ns

SP000100417

Infineon Technologies

N-Channel

700 W

200 A

2.15 V

610 ns

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

340 ns

SIGC156T60SNR2CX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

600 ns

11

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N11

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

130 ns

SIGC156T60SNR2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

600 ns

11

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N11

3

Not Qualified

260

130 ns

SIGC156T60NR2CYX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

326 ns

11

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N11

229 ns

SIGC100T60R3EX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N10

NOT SPECIFIED

NOT SPECIFIED

SIGC100T60R3X1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N10

Not Qualified

e3

SIGC100T60R3EX1SA3

Infineon Technologies

N-CHANNEL

200 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC156T60NR2CX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

326 ns

11

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N11

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

229 ns

SIGC100T65R3EX1SA2

Infineon Technologies

N-CHANNEL

200 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.4 V

NOT SPECIFIED

NOT SPECIFIED

SIGC156T60NR2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

326 ns

11

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N11

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

229 ns

SIGC100T60R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSM100GB170DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

930 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

IRG7T200CL12B

Infineon Technologies

N-Channel

200 A

2.2 V

750 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

210000 ns

BSM100GB170DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

960 W

200 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

2

930 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

FF150R12YT3BOMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

610 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

FF150R12MT4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

680 W

200 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

600 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FT150R12KE3GB4NOSA1

Infineon Technologies

N-CHANNEL

COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

850 ns

39

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X39

ISOLATED

350 ns

IRG7U200HF12B

Infineon Technologies

N-Channel

200 A

2 V

1090 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

4.9 V

ISOLATED

205000 ns

FS200R12N3T7

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

6

444 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X35

ISOLATED

235 ns

IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED

FS200R07N3E4R

Infineon Technologies

N-CHANNEL

COMPLEX

NO

600 W

200 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

6

450 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X35

NOT SPECIFIED

NOT SPECIFIED

210 ns

BSM100GB120DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

780 W

200 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

2

650 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IRG7T200CH12B

Infineon Technologies

N-Channel

200 A

2.2 V

750 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

210000 ns

FT150R12KE3G_B4

Infineon Technologies

N-CHANNEL

COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

700 W

200 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

3

850 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN LEAD

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

e0

350 ns

BSM150GB160D

Infineon Technologies

1250 W

200 A

3.7 V

1

Insulated Gate BIP Transistors

150 Cel

1600 V

20 V

FS200R12PT4P

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

FF150R12ME3G

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

695 W

200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

810 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

FT150R12KE3_B5

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE

NO

700 W

200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

3

850 ns

18

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

350 ns

IRG7T100FF12F

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

575 W

200 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

680 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

FT150R12KE3-B4

Infineon Technologies

700 W

200 A

2.15 V

3

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

FF150R12YT3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

625 W

200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

610 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

FF200R33KF2

Infineon Technologies

2190 W

200 A

4.25 V

1

Insulated Gate BIP Transistors

125 Cel

3300 V

20 V

FF200R12KS4P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

180 ns

IRG7T200HF12B

Infineon Technologies

N-Channel

200 A

2.2 V

750 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

210000 ns

FT150R12KE3B5BOSA1

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

850 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

ISOLATED

350 ns

BSM100GB170DL

Infineon Technologies

960 W

200 A

3.3 V

1

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

FF150R12MT4BOMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

10

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X10

ISOLATED

190 ns

AUIRG7CH80K6B-M

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

1220 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

7.5 V

UPPER

S-XUUC-N3

Not Qualified

330 ns

BSM100GB120DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

650 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.