Infineon Technologies - SIGC156T60SNR2C

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SIGC156T60SNR2C by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC156T60SNR2C
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 200 A; Qualification: Not Qualified; Package Style (Meter): UNCASED CHIP;
Datasheet SIGC156T60SNR2C Datasheet
In Stock435
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 200 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 600 ns
No. of Terminals: 11
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 130 ns
Package Style (Meter): UNCASED CHIP
JESD-30 Code: S-XUUC-N11
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 3
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