200 A Insulated Gate Bipolar Transistors (IGBT) 158

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGE200NB60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

600 W

200 A

UNSPECIFIED

POWER CONTROL

1.6 V

UNSPECIFIED

RECTANGULAR

1

4600 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

170 ns

SKM200GB125D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

POWER CONTROL

3.85 V

UNSPECIFIED

RECTANGULAR

2

445 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e2

111 ns

UL RECOGNIZED

IXBX75N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

THROUGH-HOLE

RECTANGULAR

1

840 ns

3

IN-LINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

SINGLE

R-PSIP-T3

COLLECTOR

277 ns

VS-GA200SA60UP

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

200 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

4

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

131 ns

UL APPROVED

FS150R12KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

CM200DY-12NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

650 W

200 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

FS150R12KT3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

FS200R06KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

450 ns

35

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

2MBI200VA-060-50

Fujitsu

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

650 ns

FS150R12PT4BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

CM200DU-12F

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC

NO

590 W

200 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CM200DU-12NFH

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

830 W

200 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

FS200R07N3E4R_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

600 W

200 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

6

450 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X35

NOT SPECIFIED

NOT SPECIFIED

210 ns

CM200TX-24T

Mitsubishi Electric

N-CHANNEL

COMPLEX

NO

1040 W

200 A

PLASTIC/EPOXY

POWER CONTROL

200 ns

1.95 V

UNSPECIFIED

RECTANGULAR

6

500 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

600 ns

-40 Cel

20 V

1000 ns

6.6 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

IXXX100N60B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

200 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

92 ns

FT150R12KE3GB4BDLA1

Infineon Technologies

N-CHANNEL

COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

850 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X39

ISOLATED

350 ns

BSM150GT120DN2

Infineon Technologies

1250 W

200 A

3 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

FS150R12KT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 W

200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

FMG1G200US60L

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

200 A

UNSPECIFIED

MOTOR CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

1

410 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

330 ns

UL RECOGNIZED

APTGF150H120G

Microsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

961 W

200 A

UNSPECIFIED

MOTOR CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

4

390 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN SILVER COPPER

UPPER

R-XUFM-X12

1

ISOLATED

Not Qualified

e1

190 ns

CM200E3U-12H

Mitsubishi Electric

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

650 W

200 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

300 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

SUPER FAST RECOVERY

NOT SPECIFIED

NOT SPECIFIED

150 ns

FF150R12ME3GBOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

810 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

CM200DY-24T

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2380 W

200 A

PLASTIC/EPOXY

POWER CONTROL

150 ns

1.95 V

UNSPECIFIED

RECTANGULAR

2

300 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

650 ns

-40 Cel

20 V

800 ns

6.6 V

UPPER

R-PUFM-X7

ISOLATED

UL RECOGNIZED

IXBK75N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

THROUGH-HOLE

RECTANGULAR

1

840 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

277 ns

IXYH100N65C3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

62 ns

IXYH82N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

295 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

119 ns

IXGX120N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

780 W

200 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

830 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

123 ns

MG200J2YS50

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

900 W

200 A

UNSPECIFIED

MOTOR CONTROL

300 ns

2.7 V

UNSPECIFIED

RECTANGULAR

2

300 ns

200 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

900 W

150 Cel

SILICON

600 V

300 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

150 ns

MG200N1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1200 W

200 A

PLASTIC/EPOXY

MOTOR CONTROL

5 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

900 ns

MG200Q2YS91

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

CM200DY-24A

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1340 W

200 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FS150R12KE3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 W

200 A

UNSPECIFIED

2.2 V

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

FS200R06KE3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

600 W

200 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

6

450 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X35

1

ISOLATED

Not Qualified

260

210 ns

FGY100T65SCDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

200 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.9 V

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

25 V

6.9 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

FAST SWITCHING

TO-247

e3

240 ns

NGTB50N120FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

360 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

Tin (Sn)

SINGLE

R-PSFM-T4

TO-247

e3

68 ns

NGTB75N65FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

262 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

78 ns

STG200M65F2D8AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

2.3 V

NO LEAD

RECTANGULAR

1

168 ns

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUUC-N9

205 ns

AEC-Q101

GA200NS61U

Infineon Technologies

625 W

200 A

2.2 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

FP200R12N3T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

454 ns

46

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X46

ISOLATED

UL RECOGNIZED

297 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

FS150R12KE3GBOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

810 ns

29

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

F3L200R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

600 W

200 A

UNSPECIFIED

POWER CONTROL

1.75 V

UNSPECIFIED

RECTANGULAR

4

480 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

IFS200B12N3E4_B37

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

363 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

168 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

IRG5U200HF12B

Infineon Technologies

N-Channel

200 A

3.5 V

710 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

130000 ns

BSM200GT120DLC

Infineon Technologies

1300 W

200 A

2.6 V

3

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

IRG5K200HF06A

Infineon Technologies

N-Channel

200 A

2.1 V

650 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

195000 ns

IRG5U200SD12B

Infineon Technologies

N-Channel

200 A

3.5 V

1460 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

280000 ns

FS150R12PT4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

680 W

200 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X20

1

ISOLATED

Not Qualified

260

190 ns

BSM200GA120D

Infineon Technologies

1700 W

200 A

2.8 V

1

Insulated Gate BIP Transistors

1200 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.