Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
600 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
1.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
4600 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
NICKEL |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
170 ns |
|||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
200 A |
UNSPECIFIED |
POWER CONTROL |
3.85 V |
UNSPECIFIED |
RECTANGULAR |
2 |
445 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN SILVER |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
e2 |
111 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1040 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
840 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
277 ns |
||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
620 ns |
4 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
LOW CONDUCTION LOSS |
NOT SPECIFIED |
NOT SPECIFIED |
131 ns |
UL APPROVED |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
|||||||||||||||||||||||||||
|
Mitsubishi Electric |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
650 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
260 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
|||||||||||||||||||||||||||
Fujitsu |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
200 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
600 ns |
7 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
650 ns |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
600 ns |
20 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
||||||||||||||||||||||||||
Mitsubishi Electric |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC |
NO |
590 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Mitsubishi Electric |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
830 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
260 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
600 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X35 |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
||||||||||||||||||||||||
|
Mitsubishi Electric |
N-CHANNEL |
COMPLEX |
NO |
1040 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
200 ns |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
500 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
600 ns |
-40 Cel |
20 V |
1000 ns |
6.6 V |
UPPER |
R-PUFM-X10 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
695 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
92 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
NO |
200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
850 ns |
39 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X39 |
ISOLATED |
350 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
1250 W |
200 A |
3 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
700 W |
200 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
|||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
695 W |
200 A |
UNSPECIFIED |
MOTOR CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
410 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
330 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Microsemi |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE |
NO |
961 W |
200 A |
UNSPECIFIED |
MOTOR CONTROL |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
12 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN SILVER COPPER |
UPPER |
R-XUFM-X12 |
1 |
ISOLATED |
Not Qualified |
e1 |
190 ns |
|||||||||||||||||||||
Mitsubishi Electric |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
650 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
300 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
SUPER FAST RECOVERY |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
810 ns |
11 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||||||
|
Mitsubishi Electric |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2380 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
150 ns |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
2 |
300 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
650 ns |
-40 Cel |
20 V |
800 ns |
6.6 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1040 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
840 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
e1 |
10 |
260 |
277 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
62 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1250 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
295 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
119 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
780 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
830 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
123 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
900 W |
200 A |
UNSPECIFIED |
MOTOR CONTROL |
300 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
300 ns |
200 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
900 W |
150 Cel |
SILICON |
600 V |
300 ns |
20 V |
400 ns |
8 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
240 |
150 ns |
||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1200 W |
200 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
900 ns |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
|||||||||||||||||||||||||||||||||
Mitsubishi Electric |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1340 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
700 W |
200 A |
UNSPECIFIED |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
600 W |
200 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X35 |
1 |
ISOLATED |
Not Qualified |
260 |
210 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
750 W |
200 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
1.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
410 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
25 V |
6.9 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
FAST SWITCHING |
TO-247 |
e3 |
240 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
536 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
360 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
Tin (Sn) |
SINGLE |
R-PSFM-T4 |
TO-247 |
e3 |
68 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
536 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
262 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T4 |
TO-247 |
e3 |
78 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
200 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
NO LEAD |
RECTANGULAR |
1 |
168 ns |
9 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUUC-N9 |
205 ns |
AEC-Q101 |
||||||||||||||||||||||||||
Infineon Technologies |
625 W |
200 A |
2.2 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
454 ns |
46 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X46 |
ISOLATED |
UL RECOGNIZED |
297 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
810 ns |
29 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X29 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
600 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
1.75 V |
UNSPECIFIED |
RECTANGULAR |
4 |
480 ns |
32 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X32 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL APPROVED |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
200 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
363 ns |
41 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X41 |
ISOLATED |
168 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
|||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
200 A |
3.5 V |
710 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
ISOLATED |
130000 ns |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
1300 W |
200 A |
2.6 V |
3 |
Insulated Gate BIP Transistors |
125 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
200 A |
2.1 V |
650 ns |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.5 V |
ISOLATED |
195000 ns |
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Infineon Technologies |
N-Channel |
200 A |
3.5 V |
1460 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
ISOLATED |
280000 ns |
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|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
680 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
600 ns |
20 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X20 |
1 |
ISOLATED |
Not Qualified |
260 |
190 ns |
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Infineon Technologies |
1700 W |
200 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
1200 V |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.