Infineon Technologies - FF150R12MT4

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FF150R12MT4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF150R12MT4
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 680 W; Maximum Collector Current (IC): 200 A; Package Style (Meter): FLANGE MOUNT;
Datasheet FF150R12MT4 Datasheet
In Stock653
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 200 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 600 ns
No. of Terminals: 10
Maximum Power Dissipation (Abs): 680 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 190 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X10
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.15 V
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