240 A Insulated Gate Bipolar Transistors (IGBT) 25

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FF200R12KE4HOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		240 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	2		800 ns	5	FLANGE MOUNT			175 Cel	SILICON	1200 V					UPPER	R-XUFM-X5	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	325 ns
IXYH85N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	1150 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		317 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247				95 ns
IXYK120N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	240 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	THROUGH-HOLE	RECTANGULAR	1		346 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA	e1	10	260	105 ns
AFGY120T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6.2 V		SINGLE	R-PSFM-T3			RC-IGBT	TO-247				183 ns	AEC-Q101
FGY160T65SPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.05 V	THROUGH-HOLE	RECTANGULAR	1		308 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6.3 V		SINGLE	R-PSFM-T3				TO-247		NOT SPECIFIED	NOT SPECIFIED	288 ns
FGY120T65SPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6.2 V		SINGLE	R-PSFM-T3						NOT SPECIFIED	NOT SPECIFIED	187 ns	AEC-Q101
AFGY160T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.05 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6.3 V		SINGLE	R-PSFM-T3				TO-247					AEC-Q101
FS150R17KE3G	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1040 W	240 A	UNSPECIFIED		2.45 V	UNSPECIFIED	RECTANGULAR	6		1300 ns	29	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V			UPPER	R-XUFM-X29	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	366 ns
FS150R17KE3GBOSA1	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		240 A	UNSPECIFIED			UNSPECIFIED	RECTANGULAR	6		1300 ns	29	FLANGE MOUNT			150 Cel	SILICON	1700 V					UPPER	R-XUFM-X29	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	366 ns
FF150R17ME3GENG	Infineon Technologies	N-Channel			1050 W	240 A			2.45 V					1300 ns					125 Cel	SILICON	1700 V	-40 Cel	20 V	6.4 V				ISOLATED							366 ns
FF200R12KE4	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	240 A	UNSPECIFIED	POWER CONTROL	2.15 V	UNSPECIFIED	RECTANGULAR	2		800 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X5	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	325 ns
FF150R17ME3G	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1050 W	240 A	UNSPECIFIED		2.45 V	UNSPECIFIED	RECTANGULAR	2		1300 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	366 ns
FF150R17ME3GBOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		240 A	UNSPECIFIED			UNSPECIFIED	RECTANGULAR	2		1300 ns	11	FLANGE MOUNT			150 Cel	SILICON	1700 V					UPPER	R-XUFM-X11	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	366 ns
IRGPS66160DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		240 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		350 ns	3	IN-LINE				SILICON	600 V					SINGLE	R-PSIP-T3	COLLECTOR			TO-274AA		NOT SPECIFIED	NOT SPECIFIED	210 ns
IRGPS46160DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.05 V	THROUGH-HOLE	RECTANGULAR	1		285 ns	3	IN-LINE			175 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSIP-T3	COLLECTOR			TO-274AA		NOT SPECIFIED	NOT SPECIFIED	155 ns
MG240V1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2400 W	240 A	UNSPECIFIED	MOTOR CONTROL	4.5 V	UNSPECIFIED	RECTANGULAR	1	1500 ns	400 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	2400 W	150 Cel	SILICON	1700 V		20 V	8 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	100 ns
IXGQ240N30PB	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	240 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		203 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V	5 V	PURE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED	133 ns
IXYN120N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	1200 W	240 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	UNSPECIFIED	RECTANGULAR	1		346 ns	4	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	5 V		UPPER	R-PUFM-X4	ISOLATED							105 ns	UL RECOGNIZED
IXGX120N120A3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		1365 ns	3	IN-LINE			150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3	COLLECTOR		LOW CONDUCTION LOSS					105 ns
IXXK100N75B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		426 ns	3	FLANGE MOUNT			175 Cel	SILICON	750 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA				67 ns
IXGK120N120A3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		1365 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	105 ns
IXYH100N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	470 W	240 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1		459 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD				87 ns
IXYH75N120B4	Littelfuse	N-CHANNEL	SINGLE	NO	1150 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD				64 ns
IXXX100N75B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		426 ns	3	IN-LINE			175 Cel	SILICON	750 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSIP-T3	COLLECTOR							67 ns
IXYX120N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	240 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	THROUGH-HOLE	RECTANGULAR	1		346 ns	3	IN-LINE			175 Cel	SILICON	1200 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3	COLLECTOR							105 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.