280 A Insulated Gate Bipolar Transistors (IGBT) 20

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS200R12KT4RBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

FS200R12KT4RB11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

FS200R12KT4RPBPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

FS200R12PT4BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IXGN200N170

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

280 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

1040 ns

4

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

UPPER

R-PUFM-X4

ISOLATED

183 ns

UL RECOGNIZED

SKM200GARL066T

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

9

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NXH450N65L4Q2F2PG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

633 W

280 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

978 ns

36

FLANGE MOUNT

125 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X36

ISOLATED

192 ns

NXH450N65L4Q2F2SG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

633 W

280 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

978 ns

40

FLANGE MOUNT

125 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X40

ISOLATED

192 ns

IFS200B12N3E4B31BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

528 ns

41

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X41

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL RECOGNIZED

2A200HB17C2L

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1150 W

280 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

730 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

290 ns

IFS200B12N3E4_B31

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

940 W

280 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

528 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL APPROVED

SP000715004

Infineon Technologies

N-Channel

1000 W

280 A

2.15 V

600 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

ISOLATED

190 ns

FS200R12KT4R_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 W

280 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

1

ISOLATED

Not Qualified

260

190 ns

UL RECOGNIZED

FS200R12KT4R

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 W

280 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

260

190 ns

UL RECOGNIZED

FS200R12PT4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 W

280 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X20

1

ISOLATED

Not Qualified

260

190 ns

FS200R12PT4PBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

IXGK120N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

780 W

280 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

123 ns

MIXG180W1200TEH

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

935 W

280 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

440 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

175 ns

UL RECOGNIZED

IXGX120N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

780 W

280 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

123 ns

IXXN200N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

940 W

280 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

1

395 ns

4

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

140 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.