50 A Insulated Gate Bipolar Transistors (IGBT) 319

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGE50N100Z	Littelfuse				200 W	50 A				3.5 V			1					Insulated Gate BIP Transistors				1000 V
IXGM25N90A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		900 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGM25N80	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					3000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGM25N80A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGE50N60Z	Littelfuse				200 W	50 A				3 V			1					Insulated Gate BIP Transistors				600 V
IXGE50N50Z	Littelfuse				200 W	50 A				3 V			1					Insulated Gate BIP Transistors				500 V
IXDH30N120AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	50 A	PLASTIC/EPOXY	MOTOR CONTROL	130 ns		THROUGH-HOLE	RECTANGULAR	1	100 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	75 ns
IXDT30N120AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	50 A	PLASTIC/EPOXY	MOTOR CONTROL	130 ns		GULL WING	RECTANGULAR	1	100 ns	400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	75 ns
IXYA20N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		132 ns	2	SMALL OUTLINE			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	51 ns
MWI25-12A7	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	225 W	50 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6		570 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
IXGM25N90	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					3000 ns				Insulated Gate BIP Transistors		150 Cel		900 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGM25N100A	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	50 A	METAL	POWER CONTROL		4 V	PIN/PEG	ROUND	1		1520 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1000 V		20 V	5 V	MATTE TIN	BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	HIGH SPEED	TO-204AE	e3			350 ns
IXGM25N100	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	50 A	METAL	POWER CONTROL		3.5 V	PIN/PEG	ROUND	1		1670 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1000 V		20 V	5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified		TO-204AE		NOT SPECIFIED	NOT SPECIFIED	350 ns
IXDR30N120	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	6.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY		e1			170 ns
IXGH25N80	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					3000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGT28N120B	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	320 ns	590 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	63 ns
IXYH20N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	230 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		132 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	51 ns
IXBT20N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	GULL WING	RECTANGULAR	1		695 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	3000 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	608 ns
IXGT28N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	320 ns	590 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	63 ns
IXGH25N100U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	3000 ns	720 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3	10	260	100 ns
IXGT24N170	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	500 ns	560 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	105 ns
IXGH25N80A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGH30N50	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGH25N120	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		1920 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1200 V		20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	350 ns
IXGH25N90	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					3000 ns				Insulated Gate BIP Transistors		150 Cel		900 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGH28N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	590 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	63 ns
IXBT20N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		695 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	3000 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	608 ns
IXGH30N50A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGH25N90A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		900 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGH25N100AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	800 ns	720 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3	10	260	100 ns
IXGH25N100	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		1670 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1000 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			350 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.