50 A Insulated Gate Bipolar Transistors (IGBT) 319

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG50J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
GT50T101	Toshiba	N-CHANNEL	SINGLE			50 A							1								SILICON	1500 V									Not Qualified
GT50J121	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	240 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	240 ns
MIG50J904H	Toshiba	N-CHANNEL	COMPLEX	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	7		500 ns	17	FLANGE MOUNT			150 Cel	SILICON	600 V					TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	e0			150 ns
MIG50J806EA	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
GT50M101	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		800 ns	3	FLANGE MOUNT				SILICON	900 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED				350 ns
MG50N1BS1	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1100 ns	3	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				450 ns
MG50J6ES50	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	280 W	50 A	UNSPECIFIED	MOTOR CONTROL	240 ns	2.7 V	UNSPECIFIED	RECTANGULAR	6	300 ns	200 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors	280 W	150 Cel	SILICON	600 V	160 ns	20 V	400 ns	8 V		UPPER	R-XUFM-X19	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	80 ns
MG50J2YS45	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7		Not Qualified
MG50J2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			50 A							2								SILICON	600 V									Not Qualified
MG50N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1100 ns	7	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				450 ns
GT50S101	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		900 ns	3	FLANGE MOUNT				SILICON	1400 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING				400 ns
MG50N2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1100 ns	7	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				450 ns
MIG50J906EA	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
GT50NR21,Q(O	Toshiba	N-CHANNEL		NO	230 W	50 A								400 ns				Insulated Gate BIP Transistors		175 Cel		1050 V		25 V
MG50Q6ES11	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6	1000 ns		19	FLANGE MOUNT				SILICON	1200 V						UPPER	R-PUFM-X19		Not Qualified
MG50Q6ES40	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	250 W	50 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	6	500 ns	800 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X19	ISOLATED	Not Qualified	HIGH SPEED				400 ns
MG50H1ZS1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		900 ns	6	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X6	ISOLATED	Not Qualified	HIGH SPEED				600 ns
MG50J6ES91	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A							6								SILICON	600 V									Not Qualified
MG50Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	50 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns	800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
MIG50J906H	Toshiba			NO	200 W	50 A	UNSPECIFIED			2.7 V	UNSPECIFIED	RECTANGULAR	1			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				UPPER	R-XUFM-X24		Not Qualified
GT50J328	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	170 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		25 V				SINGLE	R-PSFM-T3	COLLECTOR						300 ns
GT50NR21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		450 ns	3	FLANGE MOUNT				SILICON	1050 V						SINGLE	R-PSFM-T3							200 ns
MG50J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				400 ns
MIG50J804H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		500 ns	17	FLANGE MOUNT			150 Cel	SILICON	600 V					TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	e0			150 ns
GT50J101	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1	350 ns		3	FLANGE MOUNT		200 W		SILICON	600 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED
GT50MR21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT				SILICON	900 V						SINGLE	R-PSFM-T3							220 ns
MG50Q2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			50 A							2								SILICON	1200 V									Not Qualified
MG50J2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7		Not Qualified
GT50J341,Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	450 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		25 V				SINGLE	R-PSFM-T3							270 ns
GT50J328(Q)	Toshiba	N-CHANNEL		NO	140 W	50 A								170 ns				Insulated Gate BIP Transistors		150 Cel		600 V		25 V
GT50G321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	540 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		25 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	430 ns
S5978	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			3	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X3		Not Qualified	HIGH SPEED
GT50G102	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1800 ns	3	FLANGE MOUNT				SILICON	400 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING				400 ns
GT50Q101	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1	500 ns		3	FLANGE MOUNT		300 W		SILICON	1200 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED
MG50Q6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	6	500 ns		19	FLANGE MOUNT				SILICON	1200 V						UPPER	R-PUFM-X19		Not Qualified	HIGH SPEED
MIG50J806E	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG50J6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	6		500 ns	19	FLANGE MOUNT			150 Cel	SILICON	600 V						UPPER	R-PUFM-X19	ISOLATED	Not Qualified					400 ns
GT50N324	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	700 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V		25 V				SINGLE	R-PSFM-T3							330 ns
MG50Q1BS1	Toshiba	N-CHANNEL	SINGLE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-PUFM-X3		Not Qualified	HIGH SPEED
GT50J341	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	450 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		25 V				SINGLE	R-PSFM-T3							270 ns
MG50J1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	50 A	UNSPECIFIED	MOTOR CONTROL	600 ns	3.5 V	UNSPECIFIED	RECTANGULAR	1	350 ns	780 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V		20 V		6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	700 ns
MG50Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-PUFM-X7		Not Qualified
GT50J322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0			300 ns
MIG50J906E	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG50H1BS1	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		900 ns	3	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				600 ns
MG50J6ES11	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A							6								SILICON	600 V									Not Qualified
MG50N2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			50 A							2								SILICON	1000 V									Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.