50 A Insulated Gate Bipolar Transistors (IGBT) 319

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

BSM35GD120DN2E3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

50 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

BSM50GD12DLCE3226

Infineon Technologies

350 W

50 A

2.6 V

1

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

IRG5U50HF12A

Infineon Technologies

N-Channel

50 A

3.5 V

485 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

70000 ns

BSM50GD60DN2

Infineon Technologies

200 W

50 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

DF200R12W1H3_B27

Infineon Technologies

N-CHANNEL

COMPLEX

NO

375 W

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

BSM25GD120DLCE3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

380 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

120 ns

25MTO60WF

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

16

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

40

260

UL RECOGNIZED

DF80R12W2H3_B11

Infineon Technologies

N-Channel

COMPLEX

NO

190 W

50 A

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

2

600 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

IRG5K50FF06E

Infineon Technologies

N-Channel

50 A

2.1 V

350 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

80000 ns

IRG8CH50K10F

Infineon Technologies

N-CHANNEL

50 A

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

6.5 V

IRG5U50HH12E

Infineon Technologies

N-Channel

50 A

485 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

70000 ns

IRGNI0050M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

50 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

BSM50GD60DN2E3226

Infineon Technologies

200 W

50 A

2.7 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

DF75R12W1H4FB11BOMA1

Infineon Technologies

N-Channel

230 W

50 A

2.65 V

500 ns

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

58 ns

DDB6U100N16RR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

350 W

50 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSM35GD120D2

Infineon Technologies

280 W

50 A

3.2 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

25MTO60WFPBF

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

16

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X16

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

BSM50GB100D

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 W

50 A

PLASTIC/EPOXY

POWER CONTROL

5 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

30 ns

IRGTI0050M12

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

IRG5K50HF12A

Infineon Technologies

N-Channel

50 A

2.6 V

555 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

80000 ns

DF160R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

375 ns

19

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

UL APPROVED

EMP-B50P12

Infineon Technologies

N-Channel

50 A

445 ns

150 Cel

SILICON

-40 Cel

5.5 V

135 ns

DF200R12W1H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

DDB6U84N16RR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

50 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRG5W50HF06A

Infineon Technologies

N-Channel

50 A

2.7 V

265 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5 V

ISOLATED

50000 ns

DDB6U84N16RRBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

50 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSM50GB120D

Infineon Technologies

500 W

50 A

2.8 V

1

Insulated Gate BIP Transistors

1200 V

F4-35R12NS4

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

50 A

UNSPECIFIED

4 V

UNSPECIFIED

RECTANGULAR

4

350 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

BSM50GD120DN2E3226

Infineon Technologies

350 W

50 A

3 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

BSM50GAL100D

Infineon Technologies

500 W

50 A

3.3 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

BSM25GD120DLCE3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

50 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

380 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

BSM50GD120DLCE3226

Infineon Technologies

350 W

50 A

2.6 V

1

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

IRG5K50HF06A

Infineon Technologies

N-Channel

50 A

2.1 V

350 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

80000 ns

BSM35GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

120 ns

SIGC68T170R3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

UNCASED CHIP

150 Cel

SILICON

1700 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC57T120R3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

SIGC28T60S

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

396 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN LEAD

UPPER

R-XUUC-N3

Not Qualified

e0

60 ns

SIGC104T170R2CX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N10

SIGC28T65EX1SA1

Infineon Technologies

N-CHANNEL

50 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.4 V

NOT SPECIFIED

NOT SPECIFIED

SIGC57T120R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN LEAD

UPPER

R-XUUC-N

Not Qualified

e0

135 ns

SIGC104T170R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.5 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC81T120R2CSX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

SIGC185T350R2CH

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

3030 ns

UNCASED CHIP

Insulated Gate BIP Transistors

125 Cel

SILICON

3500 V

20 V

5.9 V

MATTE TIN

UPPER

S-XUUC-N

Not Qualified

e3

1150 ns

SIGC81T120R2CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

370 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

SIGC42T60SNC

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

460 ns

4

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N4

3

Not Qualified

260

95 ns

SIGC57T120R3LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

6

UNCASED CHIP

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUUC-N6

Not Qualified

e3

140 ns

SIGC42T60UNX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

370 ns

3

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

79 ns

SIGC81T120R2CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.