Infineon Technologies - IRG8CH50K10F

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IRG8CH50K10F by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG8CH50K10F
Description N-CHANNEL; Maximum Collector Current (IC): 50 A; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 30 V;
Datasheet IRG8CH50K10F Datasheet
In Stock280
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
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