50 A Insulated Gate Bipolar Transistors (IGBT) 319

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
GT50JR22	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1	180 ns	330 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		25 V			SINGLE	R-PSFM-T3							NOT SPECIFIED	NOT SPECIFIED	250 ns
MG50J1BS11	Toshiba	N-CHANNEL	SINGLE	NO	150 W	50 A	UNSPECIFIED	MOTOR CONTROL	800 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V		20 V	6 V		UPPER	R-XUFM-X3		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MG50N6ES40	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A							6								SILICON	1000 V									Not Qualified
GT50J325(Q)	Toshiba	N-CHANNEL		NO	240 W	50 A												Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG50J6ES45	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A							6								SILICON	600 V									Not Qualified
MIG50J901H	Toshiba	N-CHANNEL	COMPLEX	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			SOLDER LUG	RECTANGULAR	7			12	FLANGE MOUNT				SILICON	600 V					UPPER	R-PUFM-D12			Not Qualified	3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE
MG50Q6ES50A	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	50 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	6	300 ns	600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	350 W	150 Cel	SILICON	1200 V		20 V	6 V		UPPER	R-XUFM-X17		ISOLATED	Not Qualified	HIGH SPEED					150 ns
GT50J301(Q)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	UNSPECIFIED	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		20 V			SINGLE	R-XSFM-T3		COLLECTOR							400 ns
GN12050E	Renesas Electronics	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		900 ns	3	FLANGE MOUNT				SILICON	1200 V					SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
RJH60F0DPK-00-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	201.6 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V	8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified
MBM50A6	Renesas Electronics					50 A				3 V			1					Insulated Gate BIP Transistors				600 V		20 V
RJH60F0DPQ-A0#T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	201.6 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V	8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				138 ns
RJH1CV5DPK-00#T0	Renesas Electronics	N-CHANNEL		NO	245 W	50 A												Insulated Gate BIP Transistors		150 Cel		1200 V		30 V											NOT SPECIFIED	NOT SPECIFIED
RJH1CV5DPQ-E0#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260.4 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		270 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		30 V	8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	66 ns
GN6050E	Renesas Electronics	N-CHANNEL	SINGLE	NO	200 W	50 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	800 ns		THROUGH-HOLE	RECTANGULAR	1	400 ns	600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
MBB50AS6	Renesas Electronics	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A		POWER CONTROL					6								SILICON	600 V								ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					400 ns
2SH15	Renesas Electronics	N-CHANNEL	SINGLE	NO	150 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	600 ns	600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			SINGLE	R-PSFM-T3			Not Qualified						500 ns
RJP60F0DPE-00#J3	Renesas Electronics	N-CHANNEL		YES	122 W	50 A												Insulated Gate BIP Transistors		150 Cel		600 V		30 V	8 V
RJH6087BDPK-00-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	223.2 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V			SINGLE	R-PSFM-T3		COLLECTOR					NOT SPECIFIED	NOT SPECIFIED	80 ns
MBB50A6	Renesas Electronics					50 A				3 V			1					Insulated Gate BIP Transistors				600 V		20 V
RJP60F0DPM-00#T1	Renesas Electronics	N-CHANNEL		NO	40 W	50 A												Insulated Gate BIP Transistors		150 Cel		600 V		30 V											NOT SPECIFIED	NOT SPECIFIED
RJH1CF5RDPQ-80#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192.3 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		382 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		30 V	7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				102 ns
2SH30	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	600 ns	950 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified						710 ns
MBM50AS6	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			50 A		POWER CONTROL					2								SILICON	600 V								ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					400 ns
RJH1CF5RDPQ-80-T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192.3 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		382 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		30 V	7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				102 ns
MBM50F12	Renesas Electronics					50 A				3 V			1					Insulated Gate BIP Transistors				1200 V		20 V
RJP60F0DPE-00-J3	Renesas Electronics	N-CHANNEL		YES	122 W	50 A												Insulated Gate BIP Transistors		150 Cel		600 V		30 V	8 V
RJH1CD7DPQ-A0-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	328.9 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		210 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		30 V			SINGLE	R-PSFM-T3		COLLECTOR			TO-247				70 ns
RJH60F0DPQ-A0-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	201.6 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V	8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				138 ns
2SH21	Renesas Electronics	N-CHANNEL	SINGLE	NO	150 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			SINGLE	R-PSFM-T3			Not Qualified
RBN25H125S1FPQ-A0#CB0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	223 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.34 V	THROUGH-HOLE	RECTANGULAR	1		167 ns	3	FLANGE MOUNT			175 Cel	SILICON	1250 V		30 V	7.1 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	27 ns
RJH1CD6DPQ-E0#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	297.6 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		290 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		30 V	8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				72 ns
RJH1CM7DPQ-E0#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	328.9 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		280 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		30 V	8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	78 ns
IXGQ50N50Y4	Littelfuse				250 W	50 A				3.5 V			1					Insulated Gate BIP Transistors		150 Cel		500 V		20 V
MUBW35-12A8	Littelfuse	N-CHANNEL	COMPLEX	NO	225 W	50 A	UNSPECIFIED	POWER CONTROL		3.1 V	UNSPECIFIED	RECTANGULAR	7		570 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24		ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
IXGQ50N100Y4	Littelfuse				300 W	50 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V		20 V
IXGQ50N90Y4	Littelfuse				250 W	50 A				4.5 V			1					Insulated Gate BIP Transistors		150 Cel		900 V		20 V
IXGQ28N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		550 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e3			63 ns
IXGQ50N60Y4	Littelfuse				300 W	50 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
IXGQ28N120B	Littelfuse	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		550 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e3			63 ns
MUBW30-06A7	Littelfuse	N-CHANNEL	COMPLEX	NO		50 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		310 ns	24	FLANGE MOUNT				SILICON	600 V				MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24		ISOLATED	Not Qualified	LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			100 ns
IXGM30N50	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGE50N90Z	Littelfuse				200 W	50 A				3.5 V			1					Insulated Gate BIP Transistors				900 V
MWI25-12A7T	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	225 W	50 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6		570 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V		MATTE TIN	UPPER	R-XUFM-X13		ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
IXGP28N120B	Littelfuse	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		550 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			63 ns
IXGM30N50A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXYA20N65C3	Littelfuse	N-CHANNEL	SINGLE	YES	230 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		132 ns	2	SMALL OUTLINE			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	51 ns
IXGE50N80Z	Littelfuse				200 W	50 A				3.5 V			1					Insulated Gate BIP Transistors				800 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.