70 A Insulated Gate Bipolar Transistors (IGBT) 138

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4086PBF

Infineon Technologies

N-CHANNEL

NO

160 W

70 A

Insulated Gate BIP Transistors

150 Cel

300 V

30 V

5 V

IRG4BAC50SPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1700 ns

3

IN-LINE

150 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-273AA

NOT SPECIFIED

NOT SPECIFIED

62 ns

IRGP4750D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

273 W

70 A

PLASTIC/EPOXY

POWER CONTROL

50 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

40 ns

125 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

120 ns

-40 Cel

20 V

160 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

80 ns

IRGB4065PBF

Infineon Technologies

N-CHANNEL

NO

178 W

70 A

Insulated Gate BIP Transistors

150 Cel

300 V

30 V

5 V

IRG4BAC50S

Infineon Technologies

N-CHANNEL

SINGLE

NO

78 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

1700 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-273AA

e3

62 ns

BSM10GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80 W

70 A

UNSPECIFIED

POWER CONTROL

2.35 V

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

IRG4PC50FD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

660 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

86 ns

FP50R07N2E4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

190 W

70 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FS50R06W1E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

205 W

70 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

6

370 ns

18

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL RECOGNIZED

IRG7PH44K10DPBF

Infineon Technologies

N-CHANNEL

NO

320 W

70 A

70 ns

115 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

7.5 V

IRGP4065PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-40 Cel

30 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

FP50R07N2E4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FS50R07N2E4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

265 ns

13

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

43 ns

IRG4PC50S-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1700 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

STANDARD SPEED

TO-247AD

e3

62 ns

FS50R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

205 W

70 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

6

370 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

250 ns

FS50R07N2E4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

265 ns

25

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

UL APPROVED

FP50R07N2E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

IRGP4065DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

560 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-40 Cel

30 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

58 ns

RJH1CV7DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

465 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

98 ns

RJH1CV7DPK-00#T0

Renesas Electronics

N-CHANNEL

NO

320 W

70 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

NOT SPECIFIED

NOT SPECIFIED

IXGR55N120A3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

1253 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

e1

10

260

70 ns

IXGR35N120C

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

190 ns

265 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

410 ns

5 V

TIN LEAD

SINGLE

R-PSIP-T3

ISOLATED

77 ns

UL RECOGNIZED

IXGR35N120B

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

77 ns

UL RECOGNIZED

IXGR40N60B

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

10

260

55 ns

IXDN50N120AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

70 A

PLASTIC/EPOXY

MOTOR CONTROL

100 ns

UNSPECIFIED

RECTANGULAR

1

100 ns

450 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

105 ns

UL RECOGNIZED

IXGK35N120B

Littelfuse

N-CHANNEL

SINGLE

NO

350 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

77 ns

IXYQ30N65B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

199 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

57 ns

IXGK35N120CD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-264AA

86 ns

IXEX50N120D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

750 ns

3

IN-LINE

150 Cel

SILICON

1200 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e1

110 ns

IXGX35N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

SINGLE

R-PSIP-T3

COLLECTOR

77 ns

IXGP30N60B2

Littelfuse

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

30 ns

IXGX35N120CD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

IN-LINE

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

86 ns

IXGK35N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

77 ns

IXGK35N120C

Littelfuse

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-264AA

86 ns

IXGX35N120B

Littelfuse

N-CHANNEL

SINGLE

NO

350 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

SINGLE

R-PSIP-T3

COLLECTOR

77 ns

IXGX35N120C

Littelfuse

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

IN-LINE

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

86 ns

IXXH30N65B4D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

206 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

65 ns

IXGT35N120B

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

GULL WING

RECTANGULAR

1

320 ns

340 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

77 ns

IXGH35N120B

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

77 ns

IXGT35N120C

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

70 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

480 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-268AA

e0

86 ns

IXYH30N65B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

199 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

57 ns

IXGH35N120C

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-247AD

e0

86 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.