Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
620 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
52 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
28 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
210 ns |
660 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-247AC |
e3 |
86 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
1700 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
62 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
370 ns |
18 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X18 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
660 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
ULTRA FAST SOFT RECOVERY |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
86 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
385 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
82 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
250 ns |
18 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X18 |
1 |
ISOLATED |
45 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
370 ns |
15 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
180 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
50 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
124 ns |
309 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
300 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
265 ns |
31 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
UL APPROVED |
|||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
430 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1285 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
3600 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
922 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
230 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
206 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
10 |
260 |
65 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
44 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
620 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
52 ns |
||||||||||||||||||||
Fujitsu |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
340 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.34 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
355 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
HIGH RELIABILITY |
TO-247 |
95 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
70 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
1700 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
62 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
300 W |
70 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
e3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
366 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-247AC |
e3 |
46 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
460 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1880 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
3600 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
ISOLATED |
889 ns |
|||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
430 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.4 V |
GULL WING |
RECTANGULAR |
1 |
1285 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
3600 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
922 ns |
||||||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
70 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1100 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
300 W |
150 Cel |
SILICON |
1200 V |
20 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-264 |
NOT SPECIFIED |
NOT SPECIFIED |
230 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
273 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
50 ns |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
40 ns |
125 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
120 ns |
-40 Cel |
20 V |
160 ns |
7.4 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
28 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
48 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
316 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
-55 Cel |
30 V |
4.3 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
368 W |
70 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
25 V |
7.5 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
300 W |
70 A |
Insulated Gate BIP Transistors |
175 Cel |
650 V |
20 V |
6.5 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
290 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
18 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
73 ns |
160 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
28 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
231 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
1 |
COLLECTOR |
TO-247 |
e3 |
30 |
260 |
108 ns |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
46 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
e3 |
46 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
153 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
338 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
64 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
197 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
42.5 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
260 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
197 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
42.5 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AA |
e3 |
153 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
295 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
70 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
560 ns |
2 |
SMALL OUTLINE |
SILICON |
300 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
58 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
70 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
671 ns |
2 |
SMALL OUTLINE |
SILICON |
300 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
82 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
250 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
105 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
250 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
390 ns |
26 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
70 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
560 ns |
2 |
SMALL OUTLINE |
SILICON |
300 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
58 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL RECOGNIZED |
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Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
178 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
560 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
300 V |
-40 Cel |
30 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
58 ns |
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|
Infineon Technologies |
N-CHANNEL |
YES |
160 W |
70 A |
Insulated Gate BIP Transistors |
150 Cel |
330 V |
30 V |
5 V |
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Infineon Technologies |
500 W |
70 A |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1600 V |
20 V |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.