Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
70 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
671 ns |
2 |
SMALL OUTLINE |
SILICON |
300 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
82 ns |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
105 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
NO |
500 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
600 ns |
FLANGE MOUNT |
Other Transistors |
SILICON |
1200 V |
UPPER |
R-XUFM-X |
ISOLATED |
170 ns |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
70 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
411 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
330 V |
30 V |
5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
83 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
19 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
19 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
280 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
105 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
105 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
19 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
355 W |
70 A |
UNSPECIFIED |
3.75 V |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
14 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
70 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
151 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
52 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
105 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
70 A |
214 ns |
150 Cel |
SILICON |
330 V |
-40 Cel |
30 V |
5 V |
84 ns |
|||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
250 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
390 ns |
26 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
32 ns |
UL APPROVED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
151 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
52 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
14 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL APPROVED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
105 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
1.55 V |
UNSPECIFIED |
RECTANGULAR |
6 |
285 ns |
32 |
FLANGE MOUNT |
150 Cel |
SILICON |
950 V |
-40 Cel |
20 V |
5.85 V |
UPPER |
R-XUFM-X32 |
ISOLATED |
87 ns |
IEC-61140 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
355 W |
70 A |
UNSPECIFIED |
3.75 V |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
160 W |
70 A |
Insulated Gate BIP Transistors |
150 Cel |
330 V |
30 V |
5 V |
|||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
70 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
370 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
110 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
105 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
280 W |
70 A |
UNSPECIFIED |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
6 |
370 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL APPROVED |
|||||||||||||||||||||||||||
Infineon Technologies |
250 W |
70 A |
3 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
4 |
244 ns |
31 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
UL RECOGNIZED |
54 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
70 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
160 ns |
4 |
UNCASED CHIP |
150 Cel |
SILICON |
600 V |
UPPER |
S-XUUC-N4 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.36 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
1050 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
1580 ns |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
63 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
70 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
132 ns |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
UPPER |
S-XUUC-N |
Not Qualified |
49 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
70 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
160 ns |
4 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
UPPER |
S-XUUC-N4 |
3 |
Not Qualified |
260 |
55 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
70 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
160 ns |
4 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
S-XUUC-N4 |
55 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
500 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
2.75 V |
UNSPECIFIED |
RECTANGULAR |
1 |
19 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
UL RECOGNIZED |
||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
70 A |
165 ns |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
498 ns |
|||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
70 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
SILICON |
600 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
Not Qualified |
FAST |
TO-247AC |
e3 |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
190 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
265 ns |
28 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
390 ns |
18 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X18 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
IEC-61140 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
190 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
265 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
UL APPROVED |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
1700 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
STANDARD SPEED |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
62 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
655 ns |
33 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
221 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
360 W |
70 A |
UNSPECIFIED |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
7 |
460 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
265 ns |
31 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
43 ns |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
250 ns |
18 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X18 |
1 |
ISOLATED |
45 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
315 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
105 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
620 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST SPEED |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
52 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
190 W |
70 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
6 |
265 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
70 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
265 ns |
28 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
NO |
320 W |
70 A |
70 ns |
115 ns |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
30 V |
7.5 V |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.