70 A Insulated Gate Bipolar Transistors (IGBT) 138

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGS4055TRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

671 ns

2

SMALL OUTLINE

SILICON

300 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

82 ns

BSM50GP60_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

105 ns

BSM50GAL120D

Infineon Technologies

N-CHANNEL

NO

500 W

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

600 ns

FLANGE MOUNT

Other Transistors

SILICON

1200 V

UPPER

R-XUFM-X

ISOLATED

170 ns

IRG6B330UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

70 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

30 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

83 ns

DDB6U134N16RR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DDB6U134N16RRB11BPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

BSM30GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

70 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

BSM50GP60GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

DDB6U134N16RRBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

F4-50R12MS4

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

355 W

70 A

UNSPECIFIED

3.75 V

UNSPECIFIED

RECTANGULAR

4

390 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

BSM50GD60DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

70 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

151 ns

17

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

52 ns

F4-50R12KS4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

390 ns

24

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

BSM50GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

IRGI4085DPBF

Infineon Technologies

N-Channel

70 A

214 ns

150 Cel

SILICON

330 V

-40 Cel

30 V

5 V

84 ns

FS35R12U1T4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

70 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

390 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X26

ISOLATED

32 ns

UL APPROVED

BSM50GD60DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

250 W

70 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

151 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

F450R12MS4BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

390 ns

14

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

BSM50GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

2.55 V

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

FS3L200R10W3S7F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

1.55 V

UNSPECIFIED

RECTANGULAR

6

285 ns

32

FLANGE MOUNT

150 Cel

SILICON

950 V

-40 Cel

20 V

5.85 V

UPPER

R-XUFM-X32

ISOLATED

87 ns

IEC-61140

F4-50R12KS4

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

355 W

70 A

UNSPECIFIED

3.75 V

UNSPECIFIED

RECTANGULAR

4

390 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IRG6S330UTRLPBF

Infineon Technologies

N-CHANNEL

YES

160 W

70 A

Insulated Gate BIP Transistors

150 Cel

330 V

30 V

5 V

BSM35GD120DLCE3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

70 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

370 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

110 ns

BSM30GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

BSM35GD120DLCE3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

70 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

370 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

F450R12KS4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

390 ns

24

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

OM45L120SB

Infineon Technologies

250 W

70 A

3 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

F3L100R07W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

4

244 ns

31

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

UL RECOGNIZED

54 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

SIGC42T60NCX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

160 ns

4

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

SP001541548

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

1.36 V

THROUGH-HOLE

RECTANGULAR

1

600 ns

1050 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

1580 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

63 ns

SIGC42T60N

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

132 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N

Not Qualified

49 ns

SIGC42T60NC

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

160 ns

4

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N4

3

Not Qualified

260

55 ns

SIGC42T60NCX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

160 ns

4

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N4

55 ns

SP000101744

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

500 W

70 A

UNSPECIFIED

POWER CONTROL

2.75 V

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

UL RECOGNIZED

SP001545704

Infineon Technologies

N-Channel

70 A

165 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

6 V

498 ns

IRGPC56

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

Not Qualified

FAST

TO-247AC

e3

FS50R07N2E4BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

190 W

70 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

6

265 ns

28

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

UL APPROVED

FS100R12W2T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

390 ns

18

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

IEC-61140

FS50R07N2E4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

190 W

70 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

6

265 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

UL APPROVED

IRG4PC50S

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1700 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

STANDARD SPEED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

62 ns

FS100R12W2T7B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

655 ns

33

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

221 ns

FP50R12KS4C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

360 W

70 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

7

460 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

FP50R0R07N2E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X31

ISOLATED

43 ns

FS50R07W1E3_B11A

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

250 ns

18

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X18

1

ISOLATED

45 ns

BSM10GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

IRG4PC50F

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

620 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SPEED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

52 ns

FS50R06KE3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

190 W

70 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

6

265 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

43 ns

FS50R06KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

70 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

265 ns

28

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

43 ns

IRG7PH44K10D-EPBF

Infineon Technologies

N-CHANNEL

NO

320 W

70 A

70 ns

115 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

7.5 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.