76 A Insulated Gate Bipolar Transistors (IGBT) 15

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4650D-EPBF

Infineon Technologies

N-CHANNEL

NO

268 W

76 A

42 ns

54 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

IRGP4069D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

78 ns

IXGH39N60B

IXYS Corporation

N-CHANNEL

SINGLE

NO

200 W

76 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

55 ns

IXYA20N120B4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

440 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

48 ns

BSM50GAL120DN2

Infineon Technologies

400 W

76 A

3.2 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

IRGP4069DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

IRGP4650D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

76 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

188 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

IRGP4069PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

IRGP4650DPBF

Infineon Technologies

N-CHANNEL

NO

268 W

76 A

42 ns

54 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

IRGP4069-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

78 ns

IKW40N65ET7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230.8 W

76 A

PLASTIC/EPOXY

POWER CONTROL

1.65 V

THROUGH-HOLE

RECTANGULAR

1

437 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

43 ns

IXYP24N100C4

Littelfuse

N-CHANNEL

SINGLE

NO

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

243 ns

3

FLANGE MOUNT

175 Cel

SILICON

1000 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

50 ns

IXYP20N120B4

Littelfuse

N-CHANNEL

SINGLE

NO

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

48 ns

IXYA24N100C4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

GULL WING

RECTANGULAR

1

243 ns

2

SMALL OUTLINE

175 Cel

SILICON

1000 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

50 ns

IXGT39N60B

Littelfuse

N-CHANNEL

SINGLE

YES

76 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

710 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

55 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.