80 A Insulated Gate Bipolar Transistors (IGBT) 359

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
RJH65T46DPQ-A0#T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		80 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		215 ns	3	FLANGE MOUNT			SILICON	650 V						SINGLE	R-PSFM-T3	COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	75 ns
RJH60F5BDPQ-A0#T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260.4 W	80 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		163 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		30 V		8 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	87 ns
RJH60D6DPQ-E0#T2	Renesas Electronics	N-CHANNEL		NO	260 W	80 A											Insulated Gate BIP Transistors	150 Cel		600 V		30 V
RBN40H125S1FPQ-A0#CB0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	319 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.34 V	THROUGH-HOLE	RECTANGULAR	1		258 ns	3	FLANGE MOUNT		175 Cel	SILICON	1250 V		30 V		7.1 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	39 ns
RJH60F5DPK-00-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260.4 W	80 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		30 V		8 V		SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	75 ns
RJH60D6DPK-00#T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	80 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		240 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		30 V		6 V		SINGLE	R-PSFM-T3		Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns
IXGR72N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	132 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	240 ns	5.5 V	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	SINGLE	R-PSIP-T3	ISOLATED				e1			64 ns
IXGR72N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	244 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	390 ns	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3	ISOLATED		LOW CONDUCTION LOSS		e1	10	260	64 ns
MUBW50-12T8	Littelfuse	N-CHANNEL	COMPLEX	NO		80 A	UNSPECIFIED	MOTOR CONTROL		UNSPECIFIED	RECTANGULAR	7		610 ns	24	FLANGE MOUNT		125 Cel	SILICON	1200 V					MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24	ISOLATED	Not Qualified			e3			140 ns	UL RECOGNIZED
MWI50-12T7T	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	270 W	80 A	UNSPECIFIED	POWER CONTROL	2.15 V	UNSPECIFIED	RECTANGULAR	6		610 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X21	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns	UL RECOGNIZED
IXYQ40N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3	COLLECTOR							64 ns
IXBH32N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	80 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	THROUGH-HOLE	RECTANGULAR	1		795 ns	3	FLANGE MOUNT		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-247				573 ns
IXYP20N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	375 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.9 V	THROUGH-HOLE	RECTANGULAR	1		646 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				50 ns
IXYN30N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	680 W	80 A	PLASTIC/EPOXY	POWER CONTROL	4 V	UNSPECIFIED	RECTANGULAR	1		327 ns	4	FLANGE MOUNT		175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		UPPER	R-PUFM-X4	ISOLATED							49 ns	UL RECOGNIZED
IXYL40N250CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	577 W	80 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		505 ns	3	IN-LINE		175 Cel	SILICON	2500 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	ISOLATED							43 ns
MWI80-12T6K	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		80 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	6		610 ns	13	FLANGE MOUNT		150 Cel	SILICON	1200 V						UPPER	R-XUFM-X13	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns	UL RECOGNIZED
MG1250S-BA1MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		80 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	2		615 ns	7	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V		7 V		UPPER	R-XUFM-X7	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	350 ns	UL RECOGNIZED
IXYH40N65C3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1		130 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD				63 ns
IXYH40N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1		206 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD	e3	10	260	65 ns
IXBT32N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	400 W	80 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	GULL WING	RECTANGULAR	1		795 ns	2	SMALL OUTLINE		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA				573 ns
IXYH40N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247				64 ns
IXGH80N40B2	Littelfuse	N-CHANNEL	SINGLE	NO		80 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT		150 Cel	SILICON	400 V					MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247AD	e3	10	260	38 ns
IXGH60N40B2	Littelfuse	N-CHANNEL	SINGLE	NO		80 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		380 ns	3	FLANGE MOUNT		150 Cel	SILICON	400 V					MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247AD	e3	10	260	38 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.