Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
28 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
17 ns |
132 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
555 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
1200 V |
25 V |
7.5 V |
Matte Tin (Sn) - annealed |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
28 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
17 ns |
132 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
190 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
555 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
542 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
25 V |
7.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T4 |
TO-247 |
e3 |
90 ns |
||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
NO |
555 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
1200 V |
25 V |
7.5 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
555 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
1200 V |
25 V |
7.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
475 ns |
4 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T4 |
COLLECTOR |
TO-247 |
e3 |
70 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
414 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
78 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
20 ns |
123 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
RC-IGBT |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
50 ns |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
20 ns |
123 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
50 ns |
||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
36.4 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
81 ns |
172.5 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
43.7 ns |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
36.4 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
81 ns |
172.5 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
43.7 ns |
AEC-Q101 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
305 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
205 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
35 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
357 ns |
3 |
IN-LINE |
SILICON |
1200 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
TO-274AA |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
401 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SWITCHING SPEED |
TO-247AD |
e3 |
69 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
414 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
454 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
326 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
51 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
90 ns |
170 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
108 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-Channel |
500 W |
80 A |
2.15 V |
445 ns |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
TIN |
e3 |
56 ns |
||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
54 ns |
192 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
60 ns |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
54 ns |
192 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
RC-IGBT |
TO-247AB |
e3 |
60 ns |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
115 W |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
17 ns |
132 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
ISOLATED |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
396 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
60 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
305 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
231 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
35 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
270 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
GULL WING |
RECTANGULAR |
1 |
215 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
51 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
NO |
375 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
650 V |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
401 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
HIGH SWITCHING SPEED |
TO-247AD |
69 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
233 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
94 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
249 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
48 ns |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
283 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
202 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
NOT SPECIFIED |
NOT SPECIFIED |
169 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
260 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
271 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
69 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
444 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
76 ns |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
201 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
74 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
510 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
63 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
332 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
55 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
483 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
414 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
78 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.15 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
445 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
65 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
401 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
69 ns |
AEC-Q101 |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
535 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
1200 V |
20 V |
6.5 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
360 W |
80 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
7 |
430 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
105 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
190 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
110 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
274 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
198 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
45 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
SINGLE WITH BUILT-IN DIODE |
NO |
428 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
365 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
69 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
290 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
54 ns |
150 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
67 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
80 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
430 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
e3 |
105 ns |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
329 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
TO-264AA |
e3 |
119 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
NO |
283 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.