80 A Insulated Gate Bipolar Transistors (IGBT) 359

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FGH40N60SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

80 A

PLASTIC/EPOXY

POWER CONTROL

28 ns

THROUGH-HOLE

RECTANGULAR

1

17 ns

132 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

37 ns

FGH40T120SMD

Onsemi

N-CHANNEL

NO

555 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

25 V

7.5 V

Matte Tin (Sn) - annealed

e3

NOT SPECIFIED

NOT SPECIFIED

FGH40N60SMDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

80 A

PLASTIC/EPOXY

POWER CONTROL

28 ns

THROUGH-HOLE

RECTANGULAR

1

17 ns

132 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

37 ns

FGH40N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

110 ns

FGH40T120SMDL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

555 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

542 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

25 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

90 ns

FGH40T120SMD_F155

Fairchild Semiconductor

N-CHANNEL

NO

555 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

25 V

7.5 V

MATTE TIN

e3

FGH40T120SMD-F155

Onsemi

N-CHANNEL

NO

555 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

25 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

IKZ75N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

475 ns

4

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

70 ns

IKW40N120H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

414 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

78 ns

FGH40N60SMDF_F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

20 ns

123 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

50 ns

AEC-Q101

FGH40N60SMDF-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

20 ns

123 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

50 ns

FGH40N60SMD_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

80 A

PLASTIC/EPOXY

POWER CONTROL

36.4 ns

THROUGH-HOLE

RECTANGULAR

1

81 ns

172.5 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

43.7 ns

AEC-Q101

FGH40N60SMD-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

80 A

PLASTIC/EPOXY

POWER CONTROL

36.4 ns

THROUGH-HOLE

RECTANGULAR

1

81 ns

172.5 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

43.7 ns

AEC-Q101

IKW50N65F5FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

IRGPS40B120UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

357 ns

3

IN-LINE

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

115 ns

IKW75N60TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SWITCHING SPEED

TO-247AD

e3

69 ns

IKW40N120H3XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

414 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

78 ns

NGTB40N120FL3WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

326 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

51 ns

FGH40N60SFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

90 ns

170 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

108 ns

IKY40N120CS6XKSA1

Infineon Technologies

N-Channel

500 W

80 A

2.15 V

445 ns

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

e3

56 ns

FGH40N60SFDTU-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

54 ns

192 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AB

e3

60 ns

AEC-Q101

FGH40N60SFDTU_F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

54 ns

192 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247AB

e3

60 ns

AEC-Q101

FGAF40N60SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

17 ns

132 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

37 ns

IKW50N60TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

60 ns

IKW50N65H5FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

35 ns

IGB50N65S5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

215 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

51 ns

STGW60H65DFB

STMicroelectronics

N-CHANNEL

NO

375 W

80 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

IKW75N60TXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

HIGH SWITCHING SPEED

TO-247AD

69 ns

IKW75N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

233 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

94 ns

IKW40N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

48 ns

STGWT40HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

169 ns

STGY50NC60WD

STMicroelectronics

N-CHANNEL

SINGLE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

271 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

69 ns

IKQ40N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

444 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

76 ns

FGH80N60FD2TU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

201 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

74 ns

IKW40N65WR5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

510 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

63 ns

IKW50N60DTPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

332 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

55 ns

IKW40N120H3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

483 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

414 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

78 ns

IKW40N120CS6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

445 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

65 ns

IKW75N60TAFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

69 ns

AEC-Q101

NGTB40N120FL2WG

Onsemi

N-CHANNEL

NO

535 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

6.5 V

MATTE TIN

e3

BSM50GP120

Infineon Technologies

N-CHANNEL

COMPLEX

NO

360 W

80 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

7

430 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

FGH40N60UFTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

110 ns

IKW50N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

274 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

198 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

45 ns

AIKW75N60CTXKSA1

Infineon Technologies

N-Channel

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

365 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

69 ns

AEC-Q101

FGH40N60SFTU

Onsemi

N-CHANNEL

SINGLE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

54 ns

150 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

67 ns

BSM50GP120BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

430 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

e3

105 ns

SGL50N60RUFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

329 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

TO-264AA

e3

119 ns

STGW40H60DLFB

STMicroelectronics

N-CHANNEL

NO

283 W

80 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.