80 A Insulated Gate Bipolar Transistors (IGBT) 359

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FGH40T70SHD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

81 ns

3

FLANGE MOUNT

175 Cel

SILICON

700 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

56 ns

NGTB40N65IHRTG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

405 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

316 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

e3

FGH40T65SHD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

51.2 ns

FGH40N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

69 ns

FGH40T100SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

80 A

PLASTIC/EPOXY

POWER CONTROL

64 ns

2.3 V

THROUGH-HOLE

RECTANGULAR

1

30 ns

305 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1000 V

100 ns

-55 Cel

20 V

397 ns

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

76 ns

AFGHL40T65SQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

239 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

98 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

39 ns

AEC-Q101

NGTB40N120IHRWG

Onsemi

N-CHANNEL

NO

384 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

6.5 V

MATTE TIN

e3

NGTB40N65IHL2WG

Onsemi

N-CHANNEL

NO

300 W

80 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.5 V

Matte Tin (Sn) - annealed

e3

FGH40T65SPD-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

267 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

48 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

56 ns

AEC-Q101

AFGH40T65SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

88.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

Tin (Sn)

SINGLE

R-PSFM-T3

ISOLATED

TO-247AB

e3

27.2 ns

AEC-Q101

FGH40T70SHD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

700 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

NGTB40N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

565 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

FGH40T65SH_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247AB

e3

51.2 ns

NGTB40N65FL2WG

Onsemi

N-CHANNEL

NO

366 W

80 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.5 V

MATTE TIN

e3

FGH12040WD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

25 V

8 V

SINGLE

R-PSFM-T3

TO-247

116 ns

FGH40T65UQDF_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

231 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.67 V

THROUGH-HOLE

RECTANGULAR

1

314 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

52 ns

NGTB40N135IHRWG

Onsemi

N-CHANNEL

NO

394 W

80 A

Insulated Gate BIP Transistors

175 Cel

1350 V

20 V

6.5 V

MATTE TIN

e3

NGTB40N60FLWG

Onsemi

N-CHANNEL

NO

257 W

80 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

AFGHL40T65SQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FGH40T65UPD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

34 ns

THROUGH-HOLE

RECTANGULAR

1

22 ns

213 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

57 ns

FGH40T65SQD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

FGH40T65SH-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

51.2 ns

FGH40T100SMD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

80 A

PLASTIC/EPOXY

POWER CONTROL

64 ns

2.3 V

THROUGH-HOLE

RECTANGULAR

1

30 ns

305 ns

3

FLANGE MOUNT

175 Cel

SILICON

1000 V

100 ns

-55 Cel

20 V

397 ns

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

76 ns

FGH40T65UQDF-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

231 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.67 V

THROUGH-HOLE

RECTANGULAR

1

314 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247AB

e3

52 ns

NGTB40N120LWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

565 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

178 ns

NGTB40N65IHRWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

405 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

316 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247AD

e3

NGTB40N60L2WG

Onsemi

N-CHANNEL

NO

417 W

80 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

MATTE TIN

e3

NGTB40N60FL2WG

Onsemi

N-CHANNEL

NO

366 W

80 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

FGH4L50T65SQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

169.6 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

44.8 ns

STGW40V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGY40NC60VD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

1

Not Qualified

e3

61 ns

STGWT60V60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

243 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

80 ns

STGWA40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

52 ns

STGWA45HF60WDI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STGFW40V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

98.5 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGWA60V60DWFAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

55 ns

AEC-Q101

STGW40V60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGWA40S120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

158.46 ns

3

FLANGE MOUNT

SILICON

1200 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

50 ns

STGW40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

52 ns

STGWA60V60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

243 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

80 ns

STGW40M120DF3

STMicroelectronics

N-CHANNEL

NO

468 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

STGWT40V60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGP40V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

73 ns

STGB40V60F

STMicroelectronics

N-CHANNEL

SINGLE

YES

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

GULL WING

RECTANGULAR

1

241 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGWA40H65DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

52 ns

STGW40V60DLF

STMicroelectronics

N-CHANNEL

NO

283 W

80 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW40NC60V

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

61 ns

STGFW40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

62.5 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.