Onsemi - FGH4L50T65SQD

FGH4L50T65SQD by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGH4L50T65SQD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 44.8 ns;
Datasheet FGH4L50T65SQD Datasheet
In Stock1,065
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 80 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Surface Mount: NO
Nominal Turn Off Time (toff): 169.6 ns
No. of Terminals: 4
Maximum Power Dissipation (Abs): 268 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 44.8 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.1 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,065 $2.140 $2,279.100

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