80 A Insulated Gate Bipolar Transistors (IGBT) 359

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGW60H60DLFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

301 ns

STGWT40H65DFB

STMicroelectronics

N-CHANNEL

NO

283 W

80 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW39NC60V

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

366 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

46 ns

STGFW40V60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

98.5 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGWT40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

52 ns

STGWA40IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

2 V

THROUGH-HOLE

RECTANGULAR

1

263 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGWA40HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

169 ns

STGWT60H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

104 ns

STGW40S120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

158.46 ns

3

FLANGE MOUNT

SILICON

1200 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

50 ns

STGW60H65DFB-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

329 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

91 ns

STGW30NC60VD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

42.5 ns

STGW40H120F2

STMicroelectronics

N-CHANNEL

SINGLE

NO

468 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

351 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

56 ns

STGWT40V60DLF

STMicroelectronics

N-CHANNEL

NO

283 W

80 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGWT40H60DLFB

STMicroelectronics

N-CHANNEL

NO

283 W

80 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGB40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

YES

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

202 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

BULK: 1000

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

STGWT60H60DLFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

301 ns

STGW40H65DFB-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

209 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

54.8 ns

STGWA50M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

66 ns

AIKW75N60CT

Infineon Technologies

N-Channel

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

365 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

69 ns

AEC-Q101

IHW40N120R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

394 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

580 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

AIKW50N65DF5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

AEC-Q101

IKY40N120CS6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

445 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

56 ns

AIKW50N60CTXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

60 ns

AEC-Q101

IHW40N60RXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

264 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

IHW40T60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

272.5 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

GB50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

YES

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

223 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

IKZA75N65SS5

Infineon Technologies

N-Channel

395 W

80 A

1.7 V

180 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

Tin (Sn)

e3

27 ns

IHW40N60RFFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IKW60N60H3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

314 ns

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

64 ns

AIKB50N65DH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

305 W

80 A

PLASTIC/EPOXY

2.1 V

GULL WING

RECTANGULAR

1

181 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

38 ns

AEC-Q101

AIGB50N65F5

Infineon Technologies

N-CHANNEL

SINGLE

YES

305 W

80 A

PLASTIC/EPOXY

2.1 V

GULL WING

RECTANGULAR

1

179 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

39 ns

AEC-Q101

AIGW50N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

213 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

33 ns

AEC-Q101

IHW50N65R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

282 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

261 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

51 ns

BUP604

Infineon Technologies

N-CHANNEL

NO

300 W

80 A

120 ns

780 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin/Lead (Sn/Pb)

e0

IRG8P50N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

55 ns

AIGB50N65H5

Infineon Technologies

N-Channel

305 W

80 A

2.1 V

204 ns

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

25 ns

IHW40N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

303 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

272.5 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

IHW40N135R3FKSA1

Infineon Technologies

N-CHANNEL

NO

429 W

80 A

Insulated Gate BIP Transistors

175 Cel

1350 V

20 V

6.4 V

TIN

e3

IKZ75N65ES5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

475 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

70 ns

AIGW50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

213 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

33 ns

AEC-Q101

AIKW50N65DH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

AEC-Q101

IHW40N120R3FKSA1

Infineon Technologies

N-CHANNEL

NO

429 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

6.4 V

TIN

e3

IHW40T60XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

272.5 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

IHW40N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IHW40N65R5S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

321 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

59 ns

IKY40N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

439 ns

4

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

TO-247

e3

61 ns

IKZA75N65RH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

NO

395 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

195 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

33 ns

IHW40N135R3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

429 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

513 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.