1000 W Insulated Gate Bipolar Transistors (IGBT) 21

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
2MBI300U2B-060-50	Fuji Electric	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1000 W	300 A	UNSPECIFIED	POWER CONTROL	2.45 V	UNSPECIFIED	RECTANGULAR	2		480 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X7		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	400 ns
IXGN400N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	430 A	PLASTIC/EPOXY	POWER CONTROL	1.5 V	UNSPECIFIED	RECTANGULAR	1	200 ns	345 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					100 ns	UL RECOGNIZED
IXGK400N30A3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	400 A	PLASTIC/EPOXY	POWER CONTROL	1.15 V	THROUGH-HOLE	RECTANGULAR	1		555 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	100 ns
NVH820S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	820 A	UNSPECIFIED	POWER CONTROL	1.55 V	UNSPECIFIED	RECTANGULAR	6		1354 ns	33	FLANGE MOUNT		175 Cel	SILICON	750 V	-40 Cel	20 V	6.6 V	Matte Tin (Sn) - annealed	UPPER	R-XUFM-X33		ISOLATED				e3			454 ns
SP000715004	Infineon Technologies	N-Channel			1000 W	280 A			2.15 V					600 ns				150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V					ISOLATED							190 ns
BSM100GB120D	Infineon Technologies				1000 W	100 A			2.8 V			1					Insulated Gate BIP Transistors			1200 V
BSM100GB170DN2	Infineon Technologies				1000 W	145 A			3.9 V			1					Insulated Gate BIP Transistors	150 Cel		1700 V		20 V
IRG7T150HF12J	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	300 A	UNSPECIFIED	POWER CONTROL	2.2 V	UNSPECIFIED	RECTANGULAR	2		750 ns	11	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X11		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	650 ns
FS200R12KT4R_B11	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	280 A	UNSPECIFIED	POWER CONTROL	2.15 V	UNSPECIFIED	RECTANGULAR	6		600 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X35	1	ISOLATED	Not Qualified					260	190 ns	UL RECOGNIZED
BSM100GAL100D	Infineon Technologies				1000 W	100 A			3.3 V			1					Insulated Gate BIP Transistors	150 Cel		1000 V		20 V
FS200R12KT4R	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	280 A	UNSPECIFIED	POWER CONTROL	2.15 V	UNSPECIFIED	RECTANGULAR	6		600 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X35		ISOLATED	Not Qualified					260	190 ns	UL RECOGNIZED
FS200R12PT4	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	280 A	UNSPECIFIED	POWER CONTROL	2.15 V	UNSPECIFIED	RECTANGULAR	6		600 ns	20	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X20	1	ISOLATED	Not Qualified					260	190 ns
BSM150GT120DLC	Infineon Technologies				1000 W	250 A			2.6 V			3					Insulated Gate BIP Transistors	125 Cel		1200 V		20 V
BSM100GB160D	Infineon Technologies				1000 W	135 A						1					Insulated Gate BIP Transistors	150 Cel		1600 V		20 V
MG200J6ES60	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	200 A	UNSPECIFIED	MOTOR CONTROL	2.2 V	UNSPECIFIED	RECTANGULAR	6			17	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X17		ISOLATED	Not Qualified
MBM400GS6AW	Renesas Electronics			NO	1000 W	400 A	PLASTIC/EPOXY		2.5 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel		600 V		20 V			UPPER	R-PUFM-X7			Not Qualified
MBM200GS12AW	Renesas Electronics				1000 W	200 A			3.4 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V		20 V
IXGX400N30A3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	400 A	PLASTIC/EPOXY	POWER CONTROL	1.15 V	THROUGH-HOLE	RECTANGULAR	1		555 ns	3	IN-LINE		150 Cel	SILICON	300 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR							100 ns
IXGK320N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	320 A	PLASTIC/EPOXY	POWER CONTROL	1.3 V	THROUGH-HOLE	RECTANGULAR	1		1870 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	139 ns
IXGX320N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	320 A	PLASTIC/EPOXY	POWER CONTROL	1.3 V	THROUGH-HOLE	RECTANGULAR	1		1870 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					139 ns
MMIX1G320N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	1000 W	400 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		595 ns	21	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V		DUAL	R-PDSO-G21		ISOLATED	Not Qualified	LOW CONDUCTION LOSS			NOT SPECIFIED	NOT SPECIFIED	107 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.