Infineon Technologies - BSM100GB160D

BSM100GB160D by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM100GB160D
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 135 A; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	BSM100GB160D Datasheet
In Stock	958

BSM100GB160D Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	135 A
Maximum Power Dissipation (Abs):	1000 W
Maximum Collector-Emitter Voltage:	1600 V
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors

Pricing (USD)

Qty.	Unit Price	Ext. Price
958	-	-

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