Infineon Technologies - BSM100GB160D

  1. Home
  2. Infineon Technologies - BSM100GB160D
BSM100GB160D by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSM100GB160D
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 135 A; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V;
Datasheet BSM100GB160D Datasheet
In Stock958
NAME DESCRIPTION
Maximum Collector Current (IC): 135 A
Maximum Power Dissipation (Abs): 1000 W
Maximum Collector-Emitter Voltage: 1600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
958 - -

Popular Products

Category Top Products

FGH80N60FD2TU by Fairchild Semiconductor

FGH80N60FD2TU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Qualification: Not Qualified;
IXXX100N60C3H1 by IXYS Corporation

IXXX100N60C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;
STGY50NC60WD by STMicroelectronics

STGY50NC60WD

STMicroelectronics

STGY50NC60WD by STMicroelectronics is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It is used for power control applications, with a nominal turn off time of 271ns and a max power dissipation of 260W.
FF650R17IE4DB2BOSA1 by Infineon Technologies

FF650R17IE4DB2BOSA1

Infineon Technologies

Infineon Technologies' FF650R17IE4DB2BOSA1 is a N-CHANNEL IGBT with 2 elements, diode, and thermistor. It offers VCEsat of 2.45V, IC of 930A, and Pmax of 4150W. Ideal for power control applications due to its high voltage rating (1700V) and fast switching times (ton:765ns, toff:1870ns).
FGH75T65SHDTLN4 by Onsemi

FGH75T65SHDTLN4

Onsemi

FGH75T65SHDTLN4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max power dissipation of 455W and a max operating temperature of 175°C.
IRG4PC50FPBF by International Rectifier

IRG4PC50FPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Nominal Turn Off Time (toff): 620 ns;
APT200GN60J by Microsemi

APT200GN60J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 250 A; Terminal Position: UPPER;
FGP10N60UNDF by Fairchild Semiconductor

FGP10N60UNDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 139 W; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-PSFM-T3;
NGTB15N120LWG by Onsemi

NGTB15N120LWG

Onsemi

NGTB15N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 229W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 435ns.
IRG4PC50F-EPBF by Infineon Technologies

IRG4PC50F-EPBF

Infineon Technologies

IRG4PC50F-EPBF by Infineon is an N-CHANNEL IGBT transistor with 70A IC, 600V VCE, and 200W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 620ns and low fall time of 190ns. The package style is FLANGE MOUNT with a max operating temperature of 150°C.
IRG4BC20WPBF by Infineon Technologies

IRG4BC20WPBF

Infineon Technologies

IRG4BC20WPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 60W. It has a nominal turn-off time of 300ns, making it ideal for motor control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-temperature environments up to 150°C.
HGTG30N60C3D by Intersil

HGTG30N60C3D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Terminal Form: THROUGH-HOLE;
IKW30N60H3FKSA1 by Infineon Technologies

IKW30N60H3FKSA1

Infineon Technologies

IKW30N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It is designed for power control applications, offering a nominal turn-off time of 262ns and a nominal turn-on time of 50ns.
AUIRGB4062D1 by Infineon Technologies

AUIRGB4062D1

Infineon Technologies

Infineon's AUIRGB4062D1 is an N-CHANNEL IGBT with tr of 41ns and tf of 40ns. It boasts a max power dissipation of 246W, ideal for high-power applications like motor drives and inverters. With a VCE of 600V and IC of 59A, it ensures efficient performance even at elevated temperatures up to 175°C.
IXBH10N170 by Littelfuse

IXBH10N170

Littelfuse

IXBH10N170 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 3.8V, IC of 20A, and VCE of 1700V. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Operates b/w -55 to 150 °C with a power dissipation of 140W in a rectangular package style.
IRGR2B60KDPBF by International Rectifier

IRGR2B60KDPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum Collector-Emitter Voltage: 600 V;
IXA17IF1200HJ by Littelfuse

IXA17IF1200HJ

Littelfuse

IXA17IF1200HJ by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 28A IC, and 100W power dissipation. Ideal for power control applications, it features a built-in diode, -40 to 150 °C operating temp range, and fast switching times of 110ns turn on and 350ns turn off.
FB30R06W1E3_B1 by Infineon Technologies

FB30R06W1E3_B1

Infineon Technologies

FB30R06W1E3_B1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements and a max VCEsat of 2V. It is designed for power control applications, offering a nominal turn off time of 245ns and a max collector-emitter voltage of 600V. With a package style of FLANGE MOUNT, it can handle up to 115W power dissipation at a max operating temperature of 175°C.
STGWA40H60DLFB by STMicroelectronics

STGWA40H60DLFB

STMicroelectronics

STGWA40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Ptot of 283W. Ideal for applications requiring high power dissipation in a compact package such as motor drives, inverters, and industrial equipment.
FF600R12ME4AB11BPSA1 by Infineon Technologies

FF600R12ME4AB11BPSA1

Infineon Technologies

Insulated Gate Bipolar Transistors;