1500 W Insulated Gate Bipolar Transistors (IGBT) 25

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
4MBI340VF-120R-50	Fuji Electric	N-CHANNEL	COMPLEX	NO	1500 W	340 A	UNSPECIFIED	POWER CONTROL	800 ns	2.35 V	UNSPECIFIED	RECTANGULAR	4	350 ns	600 ns	12	FLANGE MOUNT			175 Cel	SILICON	1200 V	1300 ns		20 V	1000 ns	7 V		UPPER	R-XUFM-X12	ISOLATED							750 ns
IXYK120N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	240 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1		346 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA	e1	10	260	105 ns
IXYK140N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	480 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		1240 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-264AA				86 ns
IXYX40N250CHV	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	154 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		505 ns	3	IN-LINE			175 Cel	SILICON	2500 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR							43 ns
IXXN340N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	520 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	UNSPECIFIED	RECTANGULAR	1		346 ns	4	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		UPPER	R-PUFM-X4	ISOLATED		LOW CONDUCTION LOSS					119 ns	UL RECOGNIZED
IXYX50N170C	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	178 A	PLASTIC/EPOXY	POWER CONTROL		3.7 V	THROUGH-HOLE	RECTANGULAR	1		396 ns	3	IN-LINE			175 Cel	SILICON	1700 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR							62 ns
APTGLQ300SK120G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	500 A	UNSPECIFIED	MOTOR CONTROL		2.42 V	UNSPECIFIED	RECTANGULAR	1		414 ns	5	FLANGE MOUNT			150 Cel	SILICON	1200 V		-40 Cel	20 V		6.3 V		UPPER	R-XUFM-X5	ISOLATED							79 ns
FS800R06A2E3	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1500 W	700 A	UNSPECIFIED			1.6 V	UNSPECIFIED	RECTANGULAR	6		1000 ns	33	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X33	ISOLATED	Not Qualified						230 ns
FF225R17ME4	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1500 W	340 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	2		1500 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1700 V			20 V				UPPER	R-XUFM-X11	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	350 ns
FS800R07A2E3	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1500 W	700 A	UNSPECIFIED	POWER CONTROL		1.6 V	UNSPECIFIED	RECTANGULAR	6		690 ns	33	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	650 V			20 V				UPPER	R-XUFM-X33	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	230 ns
IFF300B17N2E4P_B11	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR	NO	1500 W	400 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	2		830 ns	26	FLANGE MOUNT			150 Cel	SILICON	1700 V		-40 Cel	20 V		6.35 V		UPPER	R-XUFM-X26	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	340 ns	UL APPROVED
FS225R17KE4	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1500 W	340 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		1500 ns	29	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1700 V			20 V				UPPER	R-XUFM-X29	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	350 ns
FS800R07A2E3BOSA1	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1500 W	700 A	UNSPECIFIED	POWER CONTROL		1.6 V	UNSPECIFIED	RECTANGULAR	6		690 ns	33	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	650 V			20 V				UPPER	R-XUFM-X33	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	230 ns
FF400R07A01E3_S6	Infineon Technologies	N-Channel			1500 W	800 A				6.5 V					530 ns					150 Cel	SILICON	700 V		-40 Cel	20 V		6.5 V				ISOLATED					NOT SPECIFIED	NOT SPECIFIED	140 ns
FF400R07A01E3S6XKSA2	Infineon Technologies	N-Channel			1500 W	800 A				6.5 V					530 ns					150 Cel	SILICON	700 V		-40 Cel	20 V		6.5 V				ISOLATED					NOT SPECIFIED	NOT SPECIFIED	140 ns
FS400R12A2T4BOSA1	Infineon Technologies				1500 W	400 A				1.85 V			3					Insulated Gate BIP Transistors		150 Cel		1200 V			20 V											NOT SPECIFIED	NOT SPECIFIED
MG200Q1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	300 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	1	300 ns		4	FLANGE MOUNT	Insulated Gate BIP Transistors	1500 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG400J1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	400 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	1500 W	150 Cel	SILICON	600 V	400 ns		20 V	400 ns	8 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	200 ns
IXYN300N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	470 A	PLASTIC/EPOXY	POWER CONTROL		1.6 V	UNSPECIFIED	RECTANGULAR	1		435 ns	4	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		5 V		UPPER	R-PUFM-X4	ISOLATED							155 ns	UL RECOGNIZED
IXYK120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	320 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1		826 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA				84 ns
MIXA300PF1200TSF	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1500 W	465 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	2		635 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X11	ISOLATED							178 ns	IEC-60747; UL RECOGNIZED
IXYX120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	320 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1		826 ns	3	IN-LINE			175 Cel	SILICON	1200 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR							84 ns
MIXA300W1200TFH	Littelfuse				1500 W	465 A				2.1 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V			20 V
IXYX120N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	240 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1		346 ns	3	IN-LINE			175 Cel	SILICON	1200 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR							105 ns
IXYX140N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	480 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		1240 ns	3	IN-LINE			175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSIP-T3	COLLECTOR		LOW CONDUCTION LOSS					86 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.