Infineon Technologies - FS400R12A2T4BOSA1

FS400R12A2T4BOSA1 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS400R12A2T4BOSA1
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 400 A; Maximum VCEsat: 1.85 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet	FS400R12A2T4BOSA1 Datasheet
In Stock	697

FS400R12A2T4BOSA1 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	400 A
Maximum Power Dissipation (Abs):	1500 W
Maximum Collector-Emitter Voltage:	1200 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
No. of Elements:	3
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.85 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
697	$310.000	$216,070.000

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