Infineon Technologies - FS400R12A2T4BOSA1

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FS400R12A2T4BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS400R12A2T4BOSA1
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 400 A; Maximum VCEsat: 1.85 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet FS400R12A2T4BOSA1 Datasheet
In Stock1,936
NAME DESCRIPTION
Other Names: SP000917120
Maximum Collector Current (IC): 400 A
Maximum Power Dissipation (Abs): 1500 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
No. of Elements: 3
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.85 V
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