167 W Insulated Gate Bipolar Transistors (IGBT) 29

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
HGTG12N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns		MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3			33 ns
HGTG12N60A4D_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V				SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	33 ns
STGP20H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		259 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	55.9 ns
STGW20V60DF	STMicroelectronics	N-CHANNEL		NO	167 W	40 A											Insulated Gate BIP Transistors	175 Cel		600 V			20 V												NOT SPECIFIED	NOT SPECIFIED
FGP30N6S2D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	45 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	100 ns	163 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			28 ns
HGT1S12N60A4S9A	Onsemi	N-CHANNEL	SINGLE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns			SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				33 ns
HGTP12N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns		MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			33 ns
SNXH160B120L2Q0PG-N	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	167 W	75 A	UNSPECIFIED	POWER CONTROL	2.7 V	UNSPECIFIED	RECTANGULAR	2		359 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20		ISOLATED							80 ns
HGTP12N60A4	Onsemi	N-CHANNEL	SINGLE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns			SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				33 ns
SNXH160B120L2Q0PG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	167 W	75 A	UNSPECIFIED	POWER CONTROL	2.7 V	UNSPECIFIED	RECTANGULAR	2		359 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	80 ns
HGT1S12N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	33 ns
HGT1S12N60A4DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns			SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				33 ns
NGTB30N60FWG	Onsemi	N-CHANNEL		NO	167 W	60 A											Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	TIN								e3
HGTG12N60A4	Onsemi	N-CHANNEL	SINGLE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns			SINGLE	R-PSFM-T3		COLLECTOR			TO-247				33 ns
NGTG30N60FWG	Onsemi	N-CHANNEL		NO	167 W	60 A											Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
STGB30H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	50 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1		184 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				27.5 ns
STGWA30HP65FB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	50 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	112 ns
STGB20H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2 V	GULL WING	RECTANGULAR	1		259 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		-55 Cel	20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	55.9 ns
STGWT20H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		259 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	259 ns	-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR					NOT SPECIFIED	NOT SPECIFIED	55.9 ns
STGWT20V60DF	STMicroelectronics	N-CHANNEL		NO	167 W	40 A											Insulated Gate BIP Transistors	175 Cel		600 V			20 V												NOT SPECIFIED	NOT SPECIFIED
STGWA30H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	50 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				27.5 ns
STGWA8M120DF3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	16 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1		356 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	28.8 ns
STGW20H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		259 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	259 ns	-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED	55.9 ns
STGW8M120DF3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	16 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1		356 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	28.8 ns
STGB20V60F	STMicroelectronics	N-CHANNEL	SINGLE	YES	167 W	20 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	GULL WING	RECTANGULAR	1		173 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V		-55 Cel	20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	49 ns
STGP30H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	50 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				27.5 ns
STGP20V60F	STMicroelectronics	N-CHANNEL	SINGLE	NO	167 W	20 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		173 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	49 ns
IRG7PK35UD1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	225 ns	3	FLANGE MOUNT		150 Cel	SILICON	1400 V		-40 Cel	30 V	265 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AC
IRG7PK35UD1-EPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	225 ns	3	FLANGE MOUNT		150 Cel	SILICON	1400 V		-40 Cel	30 V	265 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.