360 W Insulated Gate Bipolar Transistors (IGBT) 13

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
BSM50GP120	Infineon Technologies	N-CHANNEL	COMPLEX	NO	360 W	80 A	UNSPECIFIED		2.55 V	UNSPECIFIED	RECTANGULAR	7		430 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X35		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	105 ns
IXBH42N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.8 V	THROUGH-HOLE	RECTANGULAR	1		1070 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	224 ns
IXBT42N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.8 V	GULL WING	RECTANGULAR	1		1070 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	224 ns
IXGN72N60C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	78 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	UNSPECIFIED	RECTANGULAR	1	110 ns	132 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	240 ns	5.5 V		UPPER	R-PUFM-X4		ISOLATED							64 ns	UL RECOGNIZED
STGWT60H65F	STMicroelectronics	N-CHANNEL		NO	360 W	120 A											Insulated Gate BIP Transistors	150 Cel		650 V		20 V
STGW60H65F	STMicroelectronics	N-CHANNEL	SINGLE	NO	360 W	120 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		265 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	650 V		20 V				SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED	96 ns
STGW60H65DRF	STMicroelectronics	N-CHANNEL		NO	360 W	120 A											Insulated Gate BIP Transistors	150 Cel		650 V		20 V			Matte Tin (Sn)								e3
STGW60H65DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	120 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	650 V		20 V			Matte Tin (Sn)	SINGLE	R-PSFM-T3					TO-247	e3			113 ns
STGW50H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	100 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		285 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			Matte Tin (Sn)	SINGLE	R-PSFM-T3					TO-247	e3			91 ns
FP50R12KS4C	Infineon Technologies	N-CHANNEL	COMPLEX	NO	360 W	70 A	UNSPECIFIED		3.7 V	UNSPECIFIED	RECTANGULAR	7		460 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X35		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns
MWI75-12T8T	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	360 W	110 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	6		740 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X21		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	320 ns	UL RECOGNIZED
IXGN72N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	360 W	160 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	UNSPECIFIED	RECTANGULAR	1		885 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					61 ns	UL RECOGNIZED
IXGH40N120A2	Littelfuse	N-CHANNEL	SINGLE	NO	360 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	1200 ns	1220 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	2000 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	63 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.