417 W Insulated Gate Bipolar Transistors (IGBT) 9

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	JEDEC-95 Code	JESD-609 Code	Nominal Turn On Time (ton)
APT50GR120JD30	Microchip Technology				417 W	84 A						1					Insulated Gate BIP Transistors	150 Cel		1200 V		30 V
IXYL60N450	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN RESISTOR	NO	417 W	90 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	THROUGH-HOLE	RECTANGULAR	1		1580 ns	3	IN-LINE		150 Cel	SILICON	4500 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3	ISOLATED			724 ns
NGTB50N65FL2WG	Onsemi	N-CHANNEL		NO	417 W	100 A											Insulated Gate BIP Transistors	175 Cel		650 V		20 V	6.5 V	MATTE TIN					e3
NGTB50N65FL2WAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	417 W	160 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		223 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T4		TO-247	e3	60 ns
NGTB50N60FL2WG	Onsemi	N-CHANNEL		NO	417 W	100 A											Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V	Tin (Sn)					e3
FGH40N120ANTU	Onsemi	N-CHANNEL		NO	417 W	64 A							80 ns				Insulated Gate BIP Transistors	150 Cel		1200 V		25 V	7.5 V	Matte Tin (Sn) - annealed					e3
NGTB50N60S1WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	417 W	100 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		341 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		TO-247AD	e3	139 ns
NGTB40N60L2WG	Onsemi	N-CHANNEL		NO	417 W	80 A											Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V	MATTE TIN					e3
IXBL60N360	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	417 W	92 A	PLASTIC/EPOXY	POWER CONTROL	3.4 V	THROUGH-HOLE	RECTANGULAR	1		1395 ns	3	IN-LINE		150 Cel	SILICON	3600 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3	ISOLATED			730 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.