Onsemi - NGTB50N65FL2WG

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NGTB50N65FL2WG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB50N65FL2WG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet NGTB50N65FL2WG Datasheet
In Stock2,172
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Maximum Power Dissipation (Abs): 417 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
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Pricing (USD)

Qty. Unit Price Ext. Price
2,172 $4.040 $8,774.880

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