60 W Insulated Gate Bipolar Transistors (IGBT) 93

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
HGTD1N120BNS9A	Onsemi	N-CHANNEL	SINGLE	YES	60 W	5.3 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	2.9 V	GULL WING	RECTANGULAR	1	370 ns	333 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	32 ns	-55 Cel	20 V	458 ns		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260	24 ns
STGB10NC60KDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		242 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	ISOLATED	Not Qualified			e3	30	245	23 ns
IRG4BC20UD-SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	13 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	170 ns	320 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	55 ns
IRG4BC20WPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	60 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	96 ns	300 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	36 ns
IRG4BC20UDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	13 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	170 ns	320 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	55 ns
STGD10NC60HT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		247 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	260	19 ns
STGP10NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	9 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			19 ns
IRG4BC20UD-STRL	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	13 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	170 ns	320 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e0	30	225	55 ns
IRG4BC20UD-STRR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	13 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	170 ns	320 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e0	30	225	55 ns
HGTD1N120BNS	Onsemi	N-CHANNEL	SINGLE	YES	60 W	5.3 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	2.9 V	GULL WING	RECTANGULAR	1	370 ns	333 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	32 ns	-55 Cel	20 V	458 ns			SINGLE	R-PSSO-G2		COLLECTOR		AVALANCHE RATED	TO-252AA				24 ns
IRG4BC20SPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	60 W	19 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1540 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	38 ns
IRG4BC20UPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	60 W	13 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	180 ns	330 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3			Not Qualified	ULTRA FAST	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	34 ns
STGB10NC60KT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		242 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified	ULTRA FAST		e3	30	245	23 ns
IRG4PH20KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	11 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		730 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			80 ns
STGD10NC60KDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		242 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	23 ns
STGP10NC60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		242 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			23 ns
HGTP1N120BN	Onsemi	N-CHANNEL	SINGLE	NO	60 W	5.3 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	2.9 V	THROUGH-HOLE	RECTANGULAR	1	370 ns	333 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	32 ns	-55 Cel	20 V	458 ns			SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED	TO-220AB				24 ns
HGT1S7N60B3DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1	175 ns	350 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				46 ns
HGTD7N60C3S	Onsemi	N-CHANNEL	SINGLE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1	275 ns	490 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR		RC-IGBT	TO-252AA				20 ns
HGTP7N60B3D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1	175 ns	350 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				46 ns
HGTD7N60C3S9A	Onsemi	N-CHANNEL	SINGLE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1	275 ns	490 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	RC-IGBT	TO-252AA	e3	30	260	20 ns
TIG111BF	Onsemi	N-CHANNEL	SINGLE	NO	60 W	23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			30 V		6 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				250 ns
TIG110GMH	Onsemi	N-CHANNEL		NO	60 W	36 A												Insulated Gate BIP Transistors	150 Cel		600 V			30 V		6 V
HGT1S7N60B3DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1	175 ns	350 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				46 ns
HGTP7N60C3	Onsemi	N-CHANNEL	SINGLE	NO	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	275 ns	490 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-220AB				20 ns
SGP13N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	253 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3					TO-220AB				62 ns
FGD3N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		146 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260	7.4 ns
STGD10NC60SDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	18 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		560 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	ULTRA FAST	TO-252	e3	30	260	22.5 ns
STGB10NC60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		247 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V		SINGLE	R-PSSO-G2			Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED	19 ns
STGD3NB60MT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		859 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			14 ns
STGB5NC60KDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V		SINGLE	R-PSSO-G2			Not Qualified
STGD3NB60FT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	60 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		535 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			16.5 ns
STGP10NC60H	STMicroelectronics	N-CHANNEL	SINGLE	NO	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			19 ns
STGB10NC60K	STMicroelectronics	N-CHANNEL		NO	60 W	20 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		7 V
STGB10NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		247 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified			e3			19 ns
STGD10NC60H	STMicroelectronics	N-CHANNEL	SINGLE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		247 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	260	19 ns
STGD10NC60ST4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	18 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		560 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260	22.5 ns
STGD10NC60KT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		242 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified	ULTRA FAST		e3			23 ns
STGP10NC60K	STMicroelectronics	N-CHANNEL	SINGLE	NO	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		242 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V		SINGLE	R-PSFM-T3			Not Qualified	ULTRA FAST	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	23 ns
STGP10NC60KT4	STMicroelectronics	N-CHANNEL		YES	60 W	20 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		7 V
STGP5NC60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V		SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
STGB10NC60KD	STMicroelectronics	N-CHANNEL		YES	60 W	20 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		7 V	Tin/Lead (Sn/Pb)								e0
STGB5NC60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V		SINGLE	R-PSSO-G2			Not Qualified
FB15R06KL4B1	Infineon Technologies	N-CHANNEL	COMPLEX	NO	60 W	19 A	UNSPECIFIED			2.55 V	UNSPECIFIED	RECTANGULAR	7		249 ns	26	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V			MATTE TIN	UPPER	R-XUFM-X26		ISOLATED	Not Qualified			e3			71 ns
FB15R06KL4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	60 W	19 A	UNSPECIFIED			2.55 V	UNSPECIFIED	RECTANGULAR	6		249 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X23		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	71 ns
IRG4BC20W-STRR	Infineon Technologies	N-CHANNEL	SINGLE	YES	60 W	13 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	96 ns	300 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e0			36 ns
IRG4BC20FPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	60 W	16 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		640 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST SWITCHING	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	41 ns
IRG4BC20FDSTRLP	Infineon Technologies	N-Channel	SINGLE WITH BUILT-IN DIODE	YES	60 W	16 A	PLASTIC/EPOXY			2 V	GULL WING	RECTANGULAR	1	220 ns	390 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	580 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR							63 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.