714 W Insulated Gate Bipolar Transistors (IGBT) 16

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS820R08A6P2BBPSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

714 W

820 A

UNSPECIFIED

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

6

1110 ns

33

FLANGE MOUNT

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

380 ns

NXH800A100L4Q2F2P1G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-X17

ISOLATED

223.8 ns

NXH800A100L4Q2F2S1G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

PIN/PEG

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-P17

ISOLATED

223.8 ns

NXH800A100L4Q2F2S2G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

PIN/PEG

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-P17

ISOLATED

223.8 ns

NXH800A100L4Q2F2P2G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-X17

ISOLATED

223.8 ns

STGSB200M65DF2AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

714 W

216 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

GULL WING

RECTANGULAR

1

412.6 ns

9

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

DUAL

R-PDSO-G9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

193.6 ns

AEC-Q101; UL RECOGNIZED

AIKQ100N60CT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

AEC-Q101

AIKQ100N60CTXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

AEC-Q101

SP000913772

Infineon Technologies

N-Channel

714 W

140 A

2.3 V

333 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

72 ns

FS820R08A6P2B

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

714 W

820 A

UNSPECIFIED

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

6

1110 ns

33

FLANGE MOUNT

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

380 ns

IKQ100N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

IGW100N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

714 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

333 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

72 ns

IKQ100N60TA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

TO-247

83 ns

AEC-Q101

IKQ100N60TAXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

83 ns

AEC-Q101

IGW100N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

714 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

333 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

72 ns

FS820R08A6P2

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

714 W

820 A

UNSPECIFIED

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

6

1110 ns

33

FLANGE MOUNT

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

380 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.