80 W Insulated Gate Bipolar Transistors (IGBT) 46

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGB14NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

340 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-263AB

e3

30

245

31.5 ns

STGP14NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-220AB

e3

31.5 ns

STGP7NC60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

221 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

25.5 ns

STGP7NB60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

63 ns

MGP4N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e0

65 ns

STGD14NC60KT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

340 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn)

DUAL

R-PDSO-G2

1

Not Qualified

e3

31.5 ns

STGFW30NC60V

STMicroelectronics

N-CHANNEL

NO

80 W

36 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5.75 V

STGD14NC60K

STMicroelectronics

N-CHANNEL

YES

80 W

14 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

MATTE TIN

1

e3

STGD10HF60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

STGB7NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

SINGLE

R-PSSO-G2

Not Qualified

STGB7NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

SINGLE

R-PSSO-G2

Not Qualified

STGP7NC60H

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

221 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

25.5 ns

STGP7NB60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

505 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

23 ns

STGB7NB60FD

STMicroelectronics

N-CHANNEL

YES

80 W

7 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5 V

Matte Tin (Sn)

e3

STGB7NB60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

202 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSSO-G2

Not Qualified

e3

21 ns

STGB7NC60HD-1

STMicroelectronics

N-CHANNEL

NO

80 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5.75 V

STGB6NB60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

Not Qualified

e3

63 ns

STGP7NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STGB14NC60K

STMicroelectronics

N-CHANNEL

YES

80 W

14 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

MATTE TIN

1

e3

STGB10HF60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

STGP7NB60MD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

670 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

19 ns

STGB7NC60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

221 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

25.5 ns

STGB14NC60KT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

340 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

DUAL

R-PDSO-G2

1

Not Qualified

e3

31.5 ns

STGP7NB60H

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

63 ns

STGP10NB60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

29 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

30

245

1160 ns

STGB7NB60MD

STMicroelectronics

N-CHANNEL

YES

80 W

7 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5 V

Matte Tin (Sn)

e3

STGP10HF60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

STGB7NB60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

63 ns

STGP7NB60FD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

854 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

23 ns

STGB7NC60HDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

221 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

25.5 ns

STGB7NB60MDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

670 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

Not Qualified

e0

19 ns

STGB7NB60FDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

854 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

Not Qualified

e0

23 ns

STGP7NB60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

14 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

21 ns

STGB10NB60S

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

1160 ns

STGB10NB60ST4

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

29 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

3100 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

1160 ns

STGP7NB60M

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

670 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

19 ns

FB20R06KL4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80 W

25 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

192 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

68 ns

BSM10GD120DN2E3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

80 W

15 A

UNSPECIFIED

3.5 V

UNSPECIFIED

RECTANGULAR

6

460 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

BSM10GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

80 W

15 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

460 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

BSM10GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80 W

70 A

UNSPECIFIED

POWER CONTROL

2.35 V

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

MG10Q6ES50A

Toshiba

NO

80 W

15 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-XUFM-X17

Not Qualified

MG10Q6ES51A

Toshiba

NO

80 W

15 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

UPPER

R-XUFM-X17

Not Qualified

MG15J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

80 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

SOLDER LUG

RECTANGULAR

6

600 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

UPPER

R-PUFM-D13

ISOLATED

Not Qualified

HIGH SPEED

e0

400 ns

GT25J102

Toshiba

N-CHANNEL

SINGLE

NO

80 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

80 W

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

GT10J311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

GULL WING

RECTANGULAR

1

300 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

80 W

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

MIAA5WB600TMH

Littelfuse

80 W

23 A

2.5 V

2

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.