90 W Insulated Gate Bipolar Transistors (IGBT) 19

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
MUBW15-12A6K	Littelfuse	N-CHANNEL	COMPLEX	NO	90 W	19 A	UNSPECIFIED	POWER CONTROL		3.4 V	UNSPECIFIED	RECTANGULAR	7		350 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V			MATTE TIN	UPPER	R-XUFM-X25		ISOLATED	Not Qualified			e3			90 ns	UL RECOGNIZED
STGP7NB120SD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			840 ns
IRGS6B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		GULL WING	RECTANGULAR	1	27 ns	258 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	45 ns
BSM20GD60DN2	Infineon Technologies				90 W	20 A				2.7 V			1					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
IRGSL6B60K	Infineon Technologies	N-CHANNEL	SINGLE	NO	90 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns	2.2 V	THROUGH-HOLE	RECTANGULAR	1	27 ns	258 ns	3	IN-LINE			150 Cel	SILICON	600 V	63 ns	-55 Cel	20 V	282 ns	5.5 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				45 ns
BSM20GD60DN2E3224	Infineon Technologies				90 W	20 A				2.7 V			1					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
IRGSL6B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		THROUGH-HOLE	RECTANGULAR	1	27 ns	258 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSIP-T3	1	COLLECTOR	Not Qualified		TO-262	e3	30	260	45 ns
IRGB6B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		THROUGH-HOLE	RECTANGULAR	1	27 ns	258 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	45 ns
MIG20J806E	Toshiba				90 W	25 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
GT10J301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	10 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	90 W	150 Cel	SILICON	600 V			20 V		8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	400 ns
GT40M101	Toshiba	N-CHANNEL	SINGLE	NO	90 W	40 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	3.7 V	THROUGH-HOLE	RECTANGULAR	1	400 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	90 W	150 Cel	SILICON	900 V			25 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED		e0
MIG20J806H	Toshiba			NO	90 W	25 A	UNSPECIFIED			2.7 V	PIN/PEG	RECTANGULAR	1			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V			20 V				UPPER	R-XUFM-P24			Not Qualified
MIG20J806HA	Toshiba			NO	90 W	25 A	UNSPECIFIED			2.7 V	PIN/PEG	RECTANGULAR	1			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V			20 V				UPPER	R-XUFM-P24			Not Qualified
MIG20J906E	Toshiba				90 W	20 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
MIG20J906HA	Toshiba			NO	90 W	25 A	UNSPECIFIED			2.7 V	PIN/PEG	RECTANGULAR	1			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V			20 V				UPPER	R-XUFM-P24			Not Qualified
MIG20J906EA	Toshiba				90 W	20 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
MIG20J806EA	Toshiba				90 W	25 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
IXXQ30N60B3M	Littelfuse	N-CHANNEL	SINGLE	NO	90 W	33 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		292 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V		SINGLE	R-PSFM-T3		ISOLATED							57 ns
VWI15-12P1	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	90 W	18 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6		350 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X19		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	90 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.