.3 W Other Function Transistors 487

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	JESD-609 Code
2SC367TM	Toshiba	NPN	SINGLE	NO	180 MHz	.3 W	.4 A		1		Other Transistors		70		Tin/Lead (Sn/Pb)		e0
2SC2418	Toshiba	NPN	SINGLE	YES		.3 W	.08 A		1		Other Transistors			125 Cel	Tin/Lead (Sn/Pb)		e0
2SC4207-GR(TE85L,F)	Toshiba	NPN		YES	80 MHz	.3 W	.15 A				Other Transistors		200	125 Cel
2SC367GTM	Toshiba	NPN	SINGLE	NO	180 MHz	.3 W	.4 A		1		Other Transistors		70		Tin/Lead (Sn/Pb)		e0
HN2E04FGR(TE85L,F)	Toshiba	PNP	SINGLE	YES		.3 W	.1 A		1		Other Transistors		200	125 Cel
HN2E01FA	Toshiba	NPN	SINGLE	YES		.3 W	.15 A		1		Other Transistors		600	125 Cel
2SC2088	Toshiba	NPN	SINGLE	NO	150 MHz	.3 W	.05 A		1		Other Transistors		350	125 Cel	Tin/Lead (Sn/Pb)		e0
SSM6J08FU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.3 W		ENHANCEMENT MODE	1	1.3 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.3 A
HN2E01FB	Toshiba	NPN	SINGLE	YES		.3 W	.15 A		1		Other Transistors		1200	125 Cel
2SC2217	Toshiba	NPN	SINGLE	NO	300 MHz	.3 W	.05 A		1		Other Transistors		40
MT3S111P(TE12L,F)	Toshiba	NPN	SINGLE	YES	6000 MHz	.3 W	.1 A		1		Other Transistors		200	150 Cel
HN1A02FY(TE85L,F)	Toshiba	PNP		YES		.3 W	.8 A				Other Transistors		120	150 Cel
HN1C07F(TE85L)	Toshiba	NPN		YES		.3 W	.5 A				Other Transistors		70	150 Cel
HN1A07F(TE85L)	Toshiba	PNP		YES		.3 W	.5 A				Other Transistors		70	150 Cel
2SA467TM	Toshiba	PNP	SINGLE	NO	180 MHz	.3 W	.4 A		1		Other Transistors		70	125 Cel	Tin/Lead (Sn/Pb)		e0
SSM6P09FU(TE85L,F)	Toshiba	P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.2 A
2SA1090	Toshiba	PNP	SINGLE	NO	150 MHz	.3 W	.2 A		1		Other Transistors		70	125 Cel	Tin/Lead (Sn/Pb)		e0
2SA1378	Toshiba	PNP	SINGLE	NO	7 MHz	.3 W	.5 A		1		Other Transistors		70	175 Cel	Tin/Lead (Sn/Pb)		e0
2SA1618-GR(TE85L,F)	Toshiba	PNP		YES	80 MHz	.3 W	.15 A				Other Transistors		200	125 Cel
2SK291Q	Renesas Electronics	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
AN1F4M	Renesas Electronics	PNP	SINGLE	NO		.3 W	.1 A		1		Other Transistors		60	150 Cel
2SK494B	Renesas Electronics	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
NE32740B	Renesas Electronics	NPN	SINGLE	YES		.3 W	.05 A		1		Other Transistors			175 Cel	Tin/Lead (Sn/Pb)		e0
NE73416	Renesas Electronics	NPN	SINGLE	NO		.3 W	.05 A		1		Other Transistors			175 Cel	Tin/Lead (Sn/Pb)		e0
2SC1890AD	Renesas Electronics	NPN	SINGLE	NO	200 MHz	.3 W	.05 A		1		Other Transistors		250	125 Cel
PN4338	Renesas Electronics	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
UPA610TA-T2-AT	Renesas Electronics	P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SC1775E	Renesas Electronics	NPN	SINGLE	NO	200 MHz	.3 W	.05 A		1		Other Transistors		400	125 Cel
AA1L3Z	Renesas Electronics	NPN	SINGLE	NO		.3 W	.1 A		1		Other Transistors		100	150 Cel
NE88912	Renesas Electronics	PNP	SINGLE	NO		.3 W	.05 A		1		Other Transistors				Tin/Lead (Sn/Pb)		e0
2SC1775AE	Renesas Electronics	NPN	SINGLE	NO	200 MHz	.3 W	.05 A		1		Other Transistors		400	125 Cel
UPA607T-T2-A	Renesas Electronics	P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
NE434S01-T1B	Renesas Electronics	N-CHANNEL		YES		.3 W					Other Transistors	JUNCTION		125 Cel
2SK494E	Renesas Electronics	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
2SC1890AF	Renesas Electronics	NPN	SINGLE	NO	200 MHz	.3 W	.05 A		1		Other Transistors		600	125 Cel
2SA893E	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.3 W	.05 A		1		Other Transistors		800	125 Cel
UPA607T-AT	Renesas Electronics	P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SA893AD	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.3 W	.05 A		1		Other Transistors		500	125 Cel
AN1A4P	Renesas Electronics	PNP	SINGLE	NO		.3 W	.1 A		1		Other Transistors		85	150 Cel
2SK291R	Renesas Electronics	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
2SK291P	Renesas Electronics	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
NE434S01-T1	Renesas Electronics	N-CHANNEL		YES		.3 W					Other Transistors	JUNCTION		125 Cel
2SC943	Renesas Electronics	NPN	SINGLE	NO	150 MHz	.3 W	.2 A		1		Other Transistors		80	150 Cel	Tin/Lead (Sn/Pb)		e0
UPA607T-T2-AT	Renesas Electronics	P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
UPA610TA-T1-AT	Renesas Electronics	P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SK494D	Renesas Electronics	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
UPA610TA-AT	Renesas Electronics	P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SK291T	Renesas Electronics	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.