.3 W Other Function Transistors 487

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BF772W

Infineon Technologies

NPN

SINGLE

YES

.3 W

.08 A

1

Other Transistors

AC151IV

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.2 A

1

Other Transistors

100 Cel

Tin/Lead (Sn/Pb)

e0

ASY70VI

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

110

150 Cel

Tin/Lead (Sn/Pb)

e0

AC151VI

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.2 A

1

Other Transistors

100 Cel

Tin/Lead (Sn/Pb)

e0

ACY32V

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.2 A

1

Other Transistors

100 Cel

Tin/Lead (Sn/Pb)

e0

AC151RVI

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.2 A

1

Other Transistors

100 Cel

Tin/Lead (Sn/Pb)

e0

AC151VII

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.2 A

1

Other Transistors

100 Cel

Tin/Lead (Sn/Pb)

e0

ASY48VI

Infineon Technologies

PNP

SINGLE

NO

1.2 MHz

.3 W

.3 A

1

Other Transistors

110

150 Cel

Tin/Lead (Sn/Pb)

e0

AC121VII

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

190

100 Cel

Tin/Lead (Sn/Pb)

e0

BF410

Infineon Technologies

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

AC152VI

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.5 A

1

Other Transistors

110

100 Cel

Tin/Lead (Sn/Pb)

e0

AC152IV

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.5 A

1

Other Transistors

45

100 Cel

Tin/Lead (Sn/Pb)

e0

AC151RV

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.2 A

1

Other Transistors

100 Cel

Tin/Lead (Sn/Pb)

e0

AC121VI

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

110

100 Cel

Tin/Lead (Sn/Pb)

e0

AC121IV

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

45

100 Cel

Tin/Lead (Sn/Pb)

e0

ASY70V

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

75

150 Cel

Tin/Lead (Sn/Pb)

e0

AC121V

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

75

100 Cel

Tin/Lead (Sn/Pb)

e0

ASY70IV

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

45

150 Cel

Tin/Lead (Sn/Pb)

e0

BF606A

Infineon Technologies

PNP

SINGLE

NO

700 MHz

.3 W

.025 A

1

Other Transistors

30

150 Cel

BFP81

Infineon Technologies

NPN

SINGLE

YES

5800 MHz

.3 W

.03 A

1

Other Transistors

70

150 Cel

Tin/Lead (Sn/Pb)

e0

AC151RIV

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.2 A

1

Other Transistors

100 Cel

Tin/Lead (Sn/Pb)

e0

AC151V

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.2 A

1

Other Transistors

100 Cel

Tin/Lead (Sn/Pb)

e0

BCV61-E6433

Infineon Technologies

NPN

YES

.3 W

.1 A

Other Transistors

100

150 Cel

BSS84PWE6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.15 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.15 A

BSS84PWE6433

Infineon Technologies

P-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.15 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.15 A

BC858BQ-7-F

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

220

150 Cel

SSM6J06FU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.65 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.65 A

2SC1380A

Toshiba

NPN

SINGLE

NO

80 MHz

.3 W

.1 A

1

Other Transistors

400

150 Cel

Tin/Lead (Sn/Pb)

e0

2SA467GTM

Toshiba

PNP

SINGLE

NO

180 MHz

.3 W

.4 A

1

Other Transistors

70

125 Cel

Tin/Lead (Sn/Pb)

e0

HN1A02FGR(TE85L,F)

Toshiba

PNP

YES

.3 W

.8 A

Other Transistors

200

150 Cel

2SC4207-BL(TE85L,F)

Toshiba

NPN

YES

80 MHz

.3 W

.15 A

Other Transistors

350

125 Cel

MT3S111P(TE12L)

Toshiba

NPN

SINGLE

YES

6000 MHz

.3 W

.1 A

1

Other Transistors

200

150 Cel

SSM6P09FU(TE85L)

Toshiba

P-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

2SC970

Toshiba

NPN

SINGLE

NO

250 MHz

.3 W

.1 A

1

Other Transistors

60

Tin/Lead (Sn/Pb)

e0

HN1A02FY(TE85L)

Toshiba

PNP

YES

.3 W

.8 A

Other Transistors

120

150 Cel

HN2E04FBL(TE85L,F)

Toshiba

PNP

SINGLE

YES

.3 W

.1 A

1

Other Transistors

350

125 Cel

2SC979A

Toshiba

NPN

SINGLE

NO

250 MHz

.3 W

.1 A

1

Other Transistors

70

175 Cel

Tin/Lead (Sn/Pb)

e0

SSM6P05U

Toshiba

P-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

HN1C07F(TE85L,F)

Toshiba

NPN

YES

.3 W

.5 A

Other Transistors

70

150 Cel

TIN SILVER

1

e2

260

2SC2550

Toshiba

NPN

SINGLE

NO

250 MHz

.3 W

.2 A

1

Other Transistors

70

175 Cel

Tin/Lead (Sn/Pb)

e0

SSM6J08FU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

1.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.3 A

HN1A02FGR(TE85L)

Toshiba

PNP

YES

.3 W

.8 A

Other Transistors

200

150 Cel

2SC383ATM

Toshiba

NPN

SINGLE

NO

300 MHz

.3 W

.05 A

1

Other Transistors

20

125 Cel

HN2E04FGR(TE85L)

Toshiba

PNP

SINGLE

YES

.3 W

.1 A

1

Other Transistors

200

125 Cel

SSM6L09FU(TE85L)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.4 A

HN2E04FBL(TE85L)

Toshiba

PNP

SINGLE

YES

.3 W

.1 A

1

Other Transistors

350

125 Cel

2SC2499

Toshiba

NPN

SINGLE

NO

4000 MHz

.3 W

.03 A

1

Other Transistors

30

125 Cel

Tin/Lead (Sn/Pb)

e0

SSM6J06FU(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.65 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.65 A

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.