YES Other Function Transistors 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BFR93AW

Vishay Intertechnology

NPN

SINGLE

YES

4500 MHz

.3 W

.035 A

1

Other Transistors

40

150 Cel

PMZB350UPE,315

NXP Semiconductors

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.55 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.55 A

1

e3

30

260

FDMC4435BZ-F126

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

31 W

ENHANCEMENT MODE

1

18 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

18 A

1

e4

30

260

BCX71J

Vishay Intertechnology

PNP

SINGLE

YES

100 MHz

.25 W

.2 A

1

Other Transistors

250

150 Cel

Matte Tin (Sn)

e3

BC846BW/DG,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

1

Other Transistors

200

150 Cel

NX3008CBKV,115

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.22 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.22 A

1

e3

30

260

PBSS4041NT,215

NXP Semiconductors

NPN

SINGLE

YES

1.1 W

3.8 A

1

Other Transistors

30

150 Cel

TIN

1

e3

30

260

BC848C

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

420

150 Cel

Matte Tin (Sn)

1

e3

PBSS4041NZ,115

NXP Semiconductors

NPN

SINGLE

YES

2.6 W

7 A

1

Other Transistors

50

150 Cel

TIN

1

e3

30

260

SI2301DS

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.3 A

e0

AO3423

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE

YES

1.4 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2 A

1

e3

BFR520/C,215

NXP Semiconductors

NPN

SINGLE

YES

.3 W

.07 A

1

Other Transistors

60

175 Cel

BFR92AW

Vishay Intertechnology

NPN

SINGLE

YES

.3 W

.025 A

1

Other Transistors

40

150 Cel

PMXB120EPEZ

NXP Semiconductors

P-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

2.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

IRF7343QTRPBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

YES

2 W

ENHANCEMENT MODE

4.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.7 A

IRF7343ITRPBF

International Rectifier

N-CHANNEL AND P-CHANNEL

YES

2 W

ENHANCEMENT MODE

4.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.7 A

SI3443DV

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

Tin/Lead (Sn/Pb)

4.4 A

e0

JAN2N3867U4

Microchip Technology

PNP

SINGLE

YES

35 W

3 A

Other Transistors

40

200 Cel

JANTX2N3867U4

Microchip Technology

PNP

SINGLE

YES

35 W

3 A

Other Transistors

40

200 Cel

JANTXV2N3867U4

Microchip Technology

PNP

SINGLE

YES

35 W

3 A

Other Transistors

40

200 Cel

MJD122

Texas Instruments

NPN

DARLINGTON

YES

20 W

8 A

Other Transistors

1000

150 Cel

BC849C

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

420

150 Cel

Matte Tin (Sn)

1

e3

BC857A

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

e3

SI9953DY

Vishay Intertechnology

P-CHANNEL

YES

2 W

ENHANCEMENT MODE

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.3 A

1

e0

BCX70J

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.25 W

.2 A

1

Other Transistors

250

150 Cel

Matte Tin (Sn)

e3

BFR92ARGELB-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.03 A

1

Other Transistors

65

150 Cel

BC846A

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

1

e3

BCX70K

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.25 W

.2 A

1

Other Transistors

380

150 Cel

Matte Tin (Sn)

e3

PMCXB900UEZ

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

.38 W

ENHANCEMENT MODE

.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

BC848A

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

1

e3

PBSS4230QAZ

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

1 W

2 A

1

Other Transistors

100

150 Cel

SI7415DN-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

3.8 W

ENHANCEMENT MODE

1

3.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3.6 A

e0

BCX53-16/B,115

NXP Semiconductors

PNP

SINGLE

YES

1.35 W

1 A

1

Other Transistors

100

150 Cel

BFS17

Vishay Intertechnology

NPN

SINGLE

YES

.3 W

.025 A

1

Other Transistors

20

150 Cel

Matte Tin (Sn)

e3

SI4532ADY

Vishay Intertechnology

N-CHANNEL AND P-CHANNEL

YES

2 W

ENHANCEMENT MODE

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

SI7463DP

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

5.4 W

ENHANCEMENT MODE

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

135 Cel

Tin/Lead (Sn/Pb)

11 A

e0

BFP450-E6433

Infineon Technologies

NPN

SINGLE

YES

15000 MHz

.45 W

.1 A

1

Other Transistors

50

150 Cel

1

260

BUJ302AD,118

NXP Semiconductors

NPN

SINGLE

YES

80 W

4 A

1

Other Transistors

25

150 Cel

TIN

1

e3

30

260

BFR92AR

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.025 A

1

Other Transistors

150 Cel

Matte Tin (Sn)

e3

BFS17W

Vishay Intertechnology

NPN

SINGLE

YES

1600 MHz

.3 W

.05 A

1

Other Transistors

25

150 Cel

BFR93AW-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.05 A

1

Other Transistors

40

150 Cel

2SC5692(TE85L,F)

Toshiba

NPN

SINGLE

YES

1 W

2.5 A

1

Other Transistors

400

150 Cel

BFR92AW-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.03 A

1

Other Transistors

65

150 Cel

BCP69-16/DG,115

NXP Semiconductors

PNP

SINGLE

YES

40 MHz

1.35 W

2 A

1

Other Transistors

100

150 Cel

BSP316P-E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

.68 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.68 A

1

235

5HP01C-TB-H

Onsemi

P-CHANNEL

SINGLE

YES

.25 W

ENHANCEMENT MODE

1

.07 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.07 A

1

e6

BC857BS/DG,115

NXP Semiconductors

PNP

YES

100 MHz

.2 W

.1 A

Other Transistors

200

150 Cel

PBSS2515MB,315

NXP Semiconductors

NPN

SINGLE

YES

250 MHz

.59 W

.5 A

1

Other Transistors

90

150 Cel

TIN

1

e3

30

260

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.