YES Other Function Transistors 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

PMBT3906VS,115

NXP Semiconductors

PNP

YES

250 MHz

.36 W

.2 A

Other Transistors

100

150 Cel

TIN

1

e3

30

260

SUM110P06-07L

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

375 W

ENHANCEMENT MODE

1

110 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

110 A

e0

NX3008PBKS,115

NXP Semiconductors

P-CHANNEL

YES

.445 W

ENHANCEMENT MODE

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.2 A

1

e3

30

260

PMBT2907A/DG,215

NXP Semiconductors

PNP

SINGLE

YES

200 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

BC847A

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

1

e3

MMBT4403

Vishay Intertechnology

PNP

SINGLE

YES

200 MHz

.3 W

.6 A

1

Other Transistors

20

150 Cel

Matte Tin (Sn)

e3

SI2319DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.3 A

e0

PBSS4032PT,215

NXP Semiconductors

PNP

SINGLE

YES

1.1 W

2.4 A

1

Other Transistors

150

150 Cel

TIN

1

e3

30

260

NX1029X,115

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

1.09 W

ENHANCEMENT MODE

.33 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.33 A

1

e3

30

260

PMBT2907A/CU,215

NXP Semiconductors

PNP

SINGLE

YES

200 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

SI4435DY

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

8 A

e0

SUD50P06-15L

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

136 W

ENHANCEMENT MODE

1

50 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

50 A

e0

BC847BMB,315

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

200

150 Cel

TIN

1

e3

30

260

PMBT2907A/AU,215

NXP Semiconductors

PNP

SINGLE

YES

200 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

NDS356AP-NB8L005A

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

1.1 A

1

e3

30

260

AOD413A

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

12 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

12 A

NDS9407-G

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

3 A

1

e3

30

260

FDC6506P-NB4S006A

Fairchild Semiconductor

P-CHANNEL

YES

.96 W

ENHANCEMENT MODE

1.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1.8 A

1

e3

30

260

2SA2056(TE85L,F)

Toshiba

PNP

SINGLE

YES

1 W

2 A

1

Other Transistors

200

150 Cel

FDC640P-NBAD004A

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.5 A

1

e3

30

260

FDC640P_F095

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

JANTX2N2907AUBC

Microchip Technology

PNP

SINGLE

YES

.5 W

.6 A

Other Transistors

100

200 Cel

FQD8P10TM-SB82052

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

44 W

ENHANCEMENT MODE

1

6.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.6 A

BC847AMB,315

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

110

150 Cel

TIN

1

e3

30

260

BFR93A

Vishay Intertechnology

NPN

SINGLE

YES

3000 MHz

.35 W

.035 A

1

Other Transistors

40

150 Cel

Matte Tin (Sn)

e3

PMGD290UCEAX

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

.445 W

ENHANCEMENT MODE

.725 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.725 A

BFR92A

Vishay Intertechnology

NPN

SINGLE

YES

3000 MHz

.35 W

.025 A

1

Other Transistors

40

150 Cel

Matte Tin (Sn)

e3

NX3008PBKMB,315

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.3 A

1

e3

30

260

JANTXV2N2907AUBC

Microchip Technology

PNP

SINGLE

YES

.5 W

.6 A

Other Transistors

100

200 Cel

BSP317P-E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

.43 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.43 A

1

255

FDC602P-F095

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

5.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

SI2301BDS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

2.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.2 A

12A01C-TB-E

Onsemi

PNP

SINGLE

YES

.3 W

.5 A

1

Other Transistors

300

150 Cel

Tin/Bismuth (Sn/Bi)

1

e6

30A01C-TB-E

Onsemi

PNP

SINGLE

YES

.3 W

.3 A

1

Other Transistors

200

150 Cel

Tin/Bismuth (Sn/Bi)

1

e6

BCW72

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

e3

MMDT5401

Diodes Incorporated

PNP

YES

100 MHz

.2 A

Other Transistors

240

150 Cel

2SK436

Onsemi

N-CHANNEL

YES

.15 W

Other Transistors

JUNCTION

125 Cel

2SK436-20

Onsemi

N-CHANNEL

YES

.15 W

Other Transistors

JUNCTION

125 Cel

BCX56H6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

2 W

1 A

1

Other Transistors

40

150 Cel

TIN

1

e3

PMBT3906MB,315

NXP Semiconductors

PNP

SINGLE

YES

250 MHz

.59 W

.2 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

PMDXB1200UPEZ

NXP Semiconductors

P-CHANNEL

YES

4.03 W

ENHANCEMENT MODE

.41 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.41 A

BCW60B

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

20

150 Cel

Matte Tin (Sn)

e3

LSK170A-SOT-23-3L

Linear Integrated Systems

N-CHANNEL

YES

.4 W

Other Transistors

JUNCTION

135 Cel

MMDT5551

Diodes Incorporated

NPN

YES

.2 A

Other Transistors

80

150 Cel

MMBT3906-T

Rectron

PNP

SINGLE

YES

250 MHz

.15 W

.2 A

1

Other Transistors

100

150 Cel

MMBTA56

Vishay Intertechnology

PNP

SINGLE

YES

50 MHz

.3 W

.5 A

1

Other Transistors

100

150 Cel

Matte Tin (Sn)

e3

BC847BW/DG,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

1

Other Transistors

200

150 Cel

BFR520,235

NXP Semiconductors

NPN

SINGLE

YES

.3 W

.07 A

1

Other Transistors

60

150 Cel

TIN

1

e3

30

260

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.