YES Other Function Transistors 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

PMV160UP,215

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.48 W

ENHANCEMENT MODE

1

1.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1.2 A

1

e3

30

260

SMBT3904SE6327

Infineon Technologies

NPN

YES

300 MHz

.25 W

.2 A

Other Transistors

30

150 Cel

1

260

SSM6L09FU(TE85L,F)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.4 A

30

260

BC54-16PA,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

1.65 W

1 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

PBSS5630PA,115

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

2.1 W

6 A

1

Other Transistors

110

150 Cel

TIN

1

e3

30

260

PMBTA42DS,125

NXP Semiconductors

NPN

YES

50 MHz

.45 W

.1 A

Other Transistors

25

150 Cel

TIN

1

e3

30

260

PMV50UPE,215

NXP Semiconductors

P-CHANNEL

SINGLE

YES

3.57 W

ENHANCEMENT MODE

1

3.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

3.2 A

1

e3

30

260

PMXB350UPEZ

NXP Semiconductors

P-CHANNEL

SINGLE

YES

5.68 W

ENHANCEMENT MODE

1

1.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

PBSS4041PZ,115

NXP Semiconductors

PNP

SINGLE

YES

2.6 W

5.7 A

1

Other Transistors

120

150 Cel

TIN

1

e3

30

260

PBSS5160QAZ

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

85

150 Cel

PBSS9410PA,115

NXP Semiconductors

PNP

SINGLE

YES

70 MHz

2.1 W

2.7 A

1

Other Transistors

15

150 Cel

TIN

1

e3

30

260

PMV33UPE,215

NXP Semiconductors

P-CHANNEL

SINGLE

YES

4.15 W

ENHANCEMENT MODE

1

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4.4 A

1

e3

30

260

SI2301DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.3 A

SI2301DS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.3 A

1

e3

260

SI4542DY

Vishay Intertechnology

N-CHANNEL AND P-CHANNEL

YES

2 W

6.9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6.9 A

e0

SI4835BDY

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

7.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.4 A

BC807-16

Vishay Intertechnology

PNP

SINGLE

YES

.35 W

1.2 A

1

Other Transistors

100

150 Cel

Matte Tin (Sn)

e3

BF861C/A2,215

NXP Semiconductors

N-CHANNEL

YES

.25 W

Other Transistors

JUNCTION

150 Cel

BFG425W,135

NXP Semiconductors

NPN

SINGLE

YES

.135 W

.03 A

1

Other Transistors

50

150 Cel

TIN

1

e3

260

IRFR9024TR

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

42 W

ENHANCEMENT MODE

1

8.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.8 A

IRLML5103

Infineon Technologies

P-CHANNEL

SINGLE

YES

.28 W

ENHANCEMENT MODE

1

.54 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.54 A

1

LSK189-SOT-23-3L

Linear Integrated Systems

N-CHANNEL

YES

.3 W

Other Transistors

JUNCTION

150 Cel

PMPB47XP,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

1.7 W

ENHANCEMENT MODE

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4 A

1

e3

30

260

SI4559EY

Vishay Intertechnology

N-CHANNEL AND P-CHANNEL

YES

2.4 W

ENHANCEMENT MODE

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

4.5 A

SST4118

Vishay Intertechnology

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

AUIRFR9024NTRR

Infineon Technologies

P-CHANNEL

SINGLE

YES

38 W

ENHANCEMENT MODE

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

LSK189-TO-92-3L

Linear Integrated Systems

N-CHANNEL

YES

.3 W

Other Transistors

JUNCTION

150 Cel

PBSS5260PAP,115

NXP Semiconductors

PNP

YES

50 MHz

1.45 W

2 A

Other Transistors

150 Cel

TIN

1

e3

30

260

PBSS5260QAZ

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

1 W

1.7 A

1

Other Transistors

30

150 Cel

SFT1305-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

15 W

ENHANCEMENT MODE

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

10 A

1

e6

BCW68G

Vishay Intertechnology

PNP

SINGLE

YES

.33 W

.8 A

1

Other Transistors

50

150 Cel

Matte Tin (Sn)

e3

BFS17A

Vishay Intertechnology

NPN

SINGLE

YES

.3 W

.025 A

1

Other Transistors

20

175 Cel

Matte Tin (Sn)

e3

BFS17A,235

NXP Semiconductors

NPN

SINGLE

YES

.3 W

.025 A

1

Other Transistors

20

175 Cel

TIN

1

e3

30

260

MMBT2222A-G

Weitron Technology

NPN

SINGLE

YES

300 MHz

.3 W

.6 A

1

Other Transistors

40

150 Cel

MMBT4401-G

Weitron Technology

NPN

SINGLE

YES

250 MHz

.3 W

.6 A

1

Other Transistors

20

150 Cel

PBSS4041PX,115

NXP Semiconductors

PNP

SINGLE

YES

2.5 W

5 A

1

Other Transistors

80

150 Cel

TIN

1

e3

30

260

PMDXB950UPEZ

NXP Semiconductors

P-CHANNEL

YES

4.025 W

ENHANCEMENT MODE

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

CMPTA96TRPBFREE

Central Semiconductor

PNP

SINGLE

YES

20 MHz

.35 W

.5 A

1

Other Transistors

50

150 Cel

MATTE TIN

1

e3

30

260

BCW69

Vishay Intertechnology

PNP

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

120

150 Cel

Matte Tin (Sn)

e3

BC848B

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

1

e3

BF861B,235

NXP Semiconductors

N-CHANNEL

YES

.25 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

260

BFR31,235

NXP Semiconductors

N-CHANNEL

YES

.3 W

Other Transistors

JUNCTION

150 Cel

TIN

1

e3

30

260

BFR93AR

Vishay Intertechnology

NPN

SINGLE

YES

.3 W

.035 A

1

Other Transistors

40

175 Cel

Matte Tin (Sn)

e3

BFS17W,135

NXP Semiconductors

NPN

SINGLE

YES

1600 MHz

.3 W

.05 A

1

Other Transistors

25

150 Cel

TIN

e3

30

260

KTC4373Y

Jiangsu Changjiang Electronics Technology

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

120

150 Cel

MMBT5401-G

Weitron Technology

PNP

SINGLE

YES

100 MHz

.3 W

.5 A

1

Other Transistors

50

150 Cel

BF861B/A2,235

NXP Semiconductors

N-CHANNEL

YES

.25 W

Other Transistors

JUNCTION

150 Cel

BFY740B(ES)

Infineon Technologies

NPN

SINGLE

YES

.03 A

1

Other Transistors

130

175 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.