YES Other Function Transistors 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

CMPT3906TRPBFREE

Central Semiconductor

PNP

SINGLE

YES

250 MHz

.35 W

.2 A

1

Other Transistors

100

150 Cel

MATTE TIN

1

e3

30

260

NE662M04-T2-A

Renesas Electronics

NPN

SINGLE

YES

20000 MHz

.115 W

.035 A

1

Other Transistors

50

150 Cel

PBSS4032NT,215

NXP Semiconductors

NPN

SINGLE

YES

1.1 W

2.6 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

PH1214-55EL

TE Connectivity

NPN

SINGLE

YES

100 W

7 A

1

Other Transistors

200 Cel

SI2333DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

4.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.1 A

e0

2SA1463-T1

Renesas Electronics

PNP

SINGLE

YES

300 MHz

2 W

1 A

1

Other Transistors

60

150 Cel

2SA1463-T1-AZ

Renesas Electronics

PNP

SINGLE

YES

300 MHz

2 W

1 A

1

Other Transistors

60

150 Cel

2SA1463-T2

Renesas Electronics

PNP

SINGLE

YES

300 MHz

2 W

1 A

1

Other Transistors

60

150 Cel

2SA1463-T2-AZ

Renesas Electronics

PNP

SINGLE

YES

300 MHz

2 W

1 A

1

Other Transistors

60

150 Cel

2SC4215O(TE85L,F)

Toshiba

NPN

SINGLE

YES

260 MHz

.1 W

.02 A

1

Other Transistors

70

125 Cel

BC848A-G

Weitron Technology

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

110

150 Cel

BC857CMB,315

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

420

150 Cel

TIN

1

e3

30

260

BC858C

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

420

150 Cel

Matte Tin (Sn)

e3

BCW71

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

e3

BFR93AGELB-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.05 A

1

Other Transistors

40

150 Cel

Matte Tin (Sn)

e3

BFR93ARGELB-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.05 A

1

Other Transistors

40

150 Cel

Matte Tin (Sn)

e3

BFU520AVL

NXP Semiconductors

NPN

SINGLE

YES

.45 W

.05 A

1

Other Transistors

60

150 Cel

TIN

1

e3

30

260

JANS2N6849U

Infineon Technologies

P-CHANNEL

SINGLE

YES

25 W

ENHANCEMENT MODE

1

6.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

6.5 A

e0

JANSF2N2369AUBC

Microchip Technology

NPN

SINGLE

YES

.36 W

Other Transistors

20

200 Cel

NE856M02-T1-AZ

Renesas Electronics

NPN

SINGLE

YES

1.2 W

.1 A

1

Other Transistors

50

150 Cel

PBSS4230PAN,115

NXP Semiconductors

NPN

YES

60 MHz

2 W

2 A

Other Transistors

150

150 Cel

TIN

1

e3

30

260

PBSS5620PA,115

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

2.1 W

6 A

1

Other Transistors

110

150 Cel

TIN

1

e3

30

260

SI3445DV-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

5.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.6 A

e0

SUB65P06-20-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

187 W

ENHANCEMENT MODE

1

65 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

Matte Tin (Sn) - with Nickel (Ni) barrier

65 A

1

e3

BC856A

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

e3

BC857BMB,315

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

220

150 Cel

TIN

1

e3

30

260

BCX52-16,135

NXP Semiconductors

PNP

SINGLE

YES

1 W

1 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

BCX5416H6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

2 W

1 A

1

Other Transistors

100

150 Cel

TIN

1

e3

245

CJD47TR13PBFREE

Central Semiconductor

NPN

SINGLE

YES

10 MHz

15 W

1 A

1

Other Transistors

30

150 Cel

CMPT3904GTRPBFREE

Central Semiconductor

NPN

SINGLE

YES

300 MHz

.35 W

.2 A

1

Other Transistors

100

150 Cel

MATTE TIN

1

e3

30

260

CMPT3906GTRPBFREE

Central Semiconductor

PNP

SINGLE

YES

250 MHz

.35 W

.2 A

1

Other Transistors

100

150 Cel

MATTE TIN

1

e3

30

260

IRF5810TRPBF

International Rectifier

P-CHANNEL

YES

.96 W

ENHANCEMENT MODE

2.9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.9 A

2

e3

30

260

MMBT4403-G

Weitron Technology

PNP

SINGLE

YES

200 MHz

.225 W

.6 A

1

Other Transistors

20

150 Cel

PBSS4021NZ,115

NXP Semiconductors

NPN

SINGLE

YES

2.6 W

8 A

1

Other Transistors

250

150 Cel

TIN

1

e3

30

260

SI3443DV-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3.4 A

e0

SI3443DV-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

3.4 A

1

e3

30

260

SI3443DVTRPBF

International Rectifier

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.4 A

2

e3

30

260

SST201-T1-E3

Vishay Intertechnology

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

2SK2394

Onsemi

N-CHANNEL

YES

.2 W

Other Transistors

JUNCTION

150 Cel

AO6405L

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

BCP5116H6433XTMA1

Infineon Technologies

PNP

SINGLE

YES

2 W

1 A

1

Other Transistors

100

150 Cel

1

BCW66G

Vishay Intertechnology

NPN

SINGLE

YES

.33 W

.8 A

1

Other Transistors

50

150 Cel

Matte Tin (Sn)

e3

BFR182W-E6327

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.25 W

.035 A

1

Other Transistors

50

150 Cel

1

260

CCC14

Microsemi

NPN

DARLINGTON

YES

Other Transistors

15

CMPT3904ETRPBFREE

Central Semiconductor

NPN

SINGLE

YES

300 MHz

.35 W

.2 A

1

Other Transistors

100

150 Cel

MATTE TIN

1

e3

30

260

IRF7304QTRPBF

Infineon Technologies

P-CHANNEL

YES

2 W

ENHANCEMENT MODE

4.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.3 A

IRF7751TRPBF

International Rectifier

P-CHANNEL

YES

1 W

ENHANCEMENT MODE

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.5 A

2

e3

30

260

JANSF2N2369AU

Microchip Technology

NPN

SINGLE

YES

1.5 W

Other Transistors

20

200 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.