2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 43

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

MP4706

Toshiba

P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

36 W

SILICON

1 ohm

5 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

MP4701

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

36 W

SILICON

.74 ohm

3 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

MP4211

Toshiba

P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

273 mJ

5 A

10

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

5 A

SINGLE

R-PSIP-T10

ISOLATED

Not Qualified

MP4405

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.38 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

MP4204

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

MP4703

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

5 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10 A

5 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

36 W

150 Cel

SILICON

TIN LEAD

.44 ohm

5 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

e0

MP4210

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

129 mJ

5 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.32 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

MP4203

Toshiba

P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10 A

5 A

10

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.8 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

e0

MP4209

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

12 A

140 mJ

3 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

3 A

SINGLE

R-PSIP-T10

ISOLATED

Not Qualified

MP4401

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4.4 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12 A

3 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

28 W

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.74 ohm

3 A

SINGLE

R-PSIP-T12

Not Qualified

e0

MP4207

Toshiba

N-CHANNEL AND P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10 A

5 A

10

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

120 ns

600 ns

.2 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

NOT SPECIFIED

240

180 pF

MP4202

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10 A

5 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.32 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

FAST SWITCHING

e0

MP4201

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6 A

3 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.74 ohm

3 A

SINGLE

R-PSIP-T10

Not Qualified

FAST SWITCHING

e0

MP4403

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4.4 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10 A

5 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

28 W

150 Cel

SILICON

.44 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

NOT SPECIFIED

240

MP4406

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.6 ohm

2 A

SINGLE

R-PSIP-T12

Not Qualified

MP4408

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.32 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

MP4205

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.6 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

UPA1556AH

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.33 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1520BH-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1520BH

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.25 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1552BH

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.24 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1560H

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

12 A

.9 mJ

3 A

10

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

3 A

SINGLE

R-PSFM-T10

ISOLATED

Not Qualified

e0

UPA1552BH-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.24 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1526H-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1576H-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1556AH-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.33 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1527H

Renesas Electronics

P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1560H-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

12 A

.9 mJ

3 A

10

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

3 A

SINGLE

R-PSFM-T10

ISOLATED

Not Qualified

10

260

UPA1522H

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.25 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1524H-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1523BH

Renesas Electronics

P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

.4 mJ

2 A

10

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.3 ohm

2 A

SINGLE

R-PSFM-T10

ISOLATED

Not Qualified

e0

UPA1576H

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.5 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1527H-AZ

Renesas Electronics

P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1552AH

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

10

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.24 ohm

5 A

SINGLE

R-PSIP-T10

1

Not Qualified

UPA1523H

Renesas Electronics

P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.3 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

UPA1524H

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1572BH-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6 A

.1 mJ

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1550H

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1526H

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.4 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1556H

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

5 A

SINGLE

R-PSIP-T10

Not Qualified

e0

UPA1522H-AZ

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3.5 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

10

260

UPA1523BH-AZ

Renesas Electronics

P-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

8 A

.4 mJ

2 A

10

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.3 ohm

2 A

SINGLE

R-PSFM-T10

ISOLATED

Not Qualified

10

260

UPA1572BH

Renesas Electronics

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6 A

.1 mJ

2 A

10

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

2 A

SINGLE

R-PSIP-T10

Not Qualified

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.