Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
29 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
562 A |
96 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2.1 W |
150 Cel |
SILICON |
36 ns |
-55 Cel |
150 ns |
.00212 ohm |
28 A |
DUAL |
R-PDSO-N8 |
SOURCE |
160 pF |
|||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
89 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
10 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
NOT SPECIFIED |
260 |
194 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
33 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
521 A |
265 mJ |
87 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
68 ns |
.0026 ohm |
87 A |
DUAL |
R-PDSO-N8 |
SOURCE |
NOT SPECIFIED |
NOT SPECIFIED |
70 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
39 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
487 A |
337 mJ |
66 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
64 ns |
-55 Cel |
68 ns |
.0047 ohm |
66 A |
DUAL |
R-PDSO-N8 |
SOURCE |
MO-240AA |
NOT SPECIFIED |
NOT SPECIFIED |
77 pF |
||||||||||||||||||
|
ROHM |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.25 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 A |
2 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.154 ohm |
2 A |
DUAL |
R-PDSO-G5 |
1 |
Not Qualified |
e1 |
10 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
33 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
299 A |
337 mJ |
39 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
33 ns |
-55 Cel |
42 ns |
Matte Tin (Sn) - annealed |
.0105 ohm |
39 A |
DUAL |
R-PDSO-N8 |
1 |
SOURCE |
MO-240AA |
e3 |
30 |
260 |
20 pF |
|||||||||||||||
Toshiba |
N-CHANNEL AND P-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
129 mJ |
10 |
IN-LINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.32 ohm |
5 A |
SINGLE |
R-PSIP-T10 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1950 mJ |
47 A |
5 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.045 ohm |
47 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
15 A |
120 mJ |
7.5 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.125 ohm |
7.5 A |
SINGLE |
R-PSFM-T5 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
89 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
10 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
NOT SPECIFIED |
260 |
194 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
23 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
121 mJ |
21 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
27 ns |
-55 Cel |
35 ns |
.02 ohm |
21 A |
DUAL |
R-PDSO-N8 |
1 |
SOURCE |
40 |
260 |
15 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
23 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
121 mJ |
21 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.02 ohm |
7 A |
DUAL |
R-PDSO-N8 |
1 |
SOURCE |
MO-229 |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
43 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1178 A |
726 mJ |
167 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
53 ns |
-55 Cel |
144 ns |
.001 ohm |
167 A |
DUAL |
R-PDSO-N8 |
SOURCE |
MO-240AA |
NOT SPECIFIED |
NOT SPECIFIED |
300 pF |
||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.47 W |
UNSPECIFIED |
SWITCHING |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
22 A |
9 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER |
2.5 A |
BOTTOM |
S-XBCC-N9 |
e2 |
8.4 pF |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
430 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
330 A |
90 A |
7 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
430 W |
150 Cel |
SILICON |
TIN SILVER COPPER |
.025 ohm |
84 A |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
TO-240AA |
e1 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
390 W |
PLASTIC/EPOXY |
SWITCHING |
70 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
660 A |
165 A |
7 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.006 ohm |
165 A |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
TO-240AA |
NOT SPECIFIED |
NOT SPECIFIED |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.