SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR Power Field Effect Transistors (FET) 32

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

934057948118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

522 A

460 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.008 ohm

75 A

SINGLE

R-PSSO-G6

DRAIN

ESD PROTECTED

934057945127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.008 ohm

75 A

SINGLE

R-PSSO-G4

DRAIN

934057268118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.006 ohm

75 A

SINGLE

R-PSSO-G6

DRAIN

934057944127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.008 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

934057273127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.007 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

934057278118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

456 A

739 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.01 ohm

75 A

SINGLE

R-PSSO-G6

DRAIN

934057945118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.008 ohm

75 A

SINGLE

R-PSSO-G4

DRAIN

934057272118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.007 ohm

75 A

SINGLE

R-PSSO-G4

DRAIN

934057267127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.005 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

934057279127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

739 mJ

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.009 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

934063235118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

346 A

214 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.011 ohm

75 A

SINGLE

R-PSSO-G6

DRAIN

BUK7C06-40AITE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

155 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.006 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

30

245

BUK7909-75AIE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

739 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7C08-55AITE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

522 A

460 mJ

75 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

ESD PROTECTED

e3

30

245

BUK7905-40AIE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.005 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7C08-55AITE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

522 A

460 mJ

130 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

ESD PROTECTED

e3

30

245

BUK7108-40AIE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

221 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

117 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7C10-75AITE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

456 A

739 mJ

114 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.01 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

30

245

BUK7107-55AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.007 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7C06-40AITE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

75 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.006 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

30

245

BUK9C10-65BIT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

346 A

214 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.011 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

BUK9C10-55BIT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

401 A

215 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.015 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

e3

30

245

AEC-Q101; IEC-60134

BUK7907-55AIE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7908-40AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

221 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

e3

BUK7908-40AIE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

221 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

e3

BUK7905-40AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.005 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7108-40AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

221 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7C10-75AITE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

456 A

739 mJ

75 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.01 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

30

245

BUK7907-55AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7909-75AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

739 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

934061327118

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

401 A

215 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.015 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

e3

30

245

AEC-Q101; IEC-60134

BUK9C10-55BIT/A,11

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

401 A

215 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

75 A

SINGLE

R-PSSO-G6

DRAIN

AEC-Q101; IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.