NXP Semiconductors - BUK9C10-65BIT

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BUK9C10-65BIT by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9C10-65BIT
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR; Surface Mount: YES; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
Datasheet BUK9C10-65BIT Datasheet
In Stock116
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 346 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .011 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 214 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
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